scholarly journals A 77-dB Dynamic-Range Analog Front-End for Fine-Dust Detection Systems with Dual-Mode Ultra-Low Noise TIA

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6360
Author(s):  
Reza E. Rad ◽  
Arash Hejazi ◽  
Seyed-Ali H. Asl ◽  
Khuram Shehzad ◽  
Deeksha Verma ◽  
...  

This paper presents an analog front-end for fine-dust detection systems with a 77-dB-wide dynamic range and a dual-mode ultra-low noise TIA with 142-dBΩ towards the maximum gain. The required high sensitivity of the analog signal conditioning path dictates having a high sensitivity at the front-end while the Input-Referred Noise (IRN) is kept low. Therefore, a TIA with a high sensitivity to detected current bio-signals is provided by a photodiode module. The analog front end is formed by the TIA, a DC-Offset Cancellation (DCOC) circuit, a Single-to-Differential Amplifier (SDA), and two Programmable Gain Amplifiers (PGAs). Gain adjustment is implemented by a coarse-gain-step using selective loads with four different gain values and fine-gain steps by 42 dB dynamic range during 16 fine steps. The settling time of the TIA is compensated using a capacitive compensation which is applied for the last stage. An off-state circuitry is proposed to avoid any off-current leakage. This TIA is designed in a 0.18 µm standard CMOS technology. Post-layout simulations show a high gain operation with a 67 dB dynamic range, input-referred noise, less than 600 fA/√Hz in low frequencies, and less than 27 fA/√Hz at 20 kHz, a minimum detectable current signal of 4 pA, and a 2.71 mW power consumption. After measuring the full path of the analog signal conditioning path, the experimental results of the fabricated chip show a maximum gain of 142 dB for the TIA. The Single-to-Differential Amplifier delivers a differential waveform with a unity gain. The PGA1 and PGA2 show a maximum gain of 6.7 dB and 6.3 dB, respectively. The full-path analog front-end shows a wide dynamic range of up to 77 dB in the measurement results.

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 512
Author(s):  
Binghui Lin ◽  
Mohamed Atef ◽  
Guoxing Wang

A low-power, high-gain, and low-noise analog front-end (AFE) for wearable photoplethysmography (PPG) acquisition systems is designed and fabricated in a 0.35 μm CMOS process. A high transimpedance gain of 142 dBΩ and a low input-referred noise of only 64.2 pArms was achieved. A Sub-Hz filter was integrated using a pseudo resistor, resulting in a small silicon area. To mitigate the saturation problem caused by background light (BGL), a BGL cancellation loop and a new simple automatic gain control block are used to enhance the dynamic range and improve the linearity of the AFE. The measurement results show that a DC photocurrent component up-to-10 μA can be rejected and the PPG output swing can reach 1.42 Vpp at THD < 1%. The chip consumes a total power of 14.85 μW using a single 3.3-V power supply. In this work, the small area and efficiently integrated blocks were used to implement the PPG AFE and the silicon area is minimized to 0.8 mm × 0.8 mm.


Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh ◽  
Nguyen Xuan Truong ◽  
Nguyen Huu Duc ◽  
Bach Gia Duong

<p>This paper focuses on the design and implementation of a front-end for a Vinasat satellite receiver with auto-searching mechanism and auto-tracking satellite. The front-end consists of a C-band low-noise block down-converter and a L-band receiver. The receiver is designed to meet the requirements about wide-band, high sensitivity, large dynamic range, low noise figure. To reduce noise figure and increase bandwidth, the C-band low-noise amplifier is designed using T-type of matching network with negative feedback and the L-band LNA is designed using cascoded techniques. The local oscillator uses a voltage controlled oscillator combine phase locked loop to reduce the phase noise and select channels. The front-end has successfully been designed and fabricated with parameters: Input frequency is C-band; sensitivity is greater than -130 dBm for C-band receiver and is greater than -110dBm for L-band receiver; output signals are AM/FM demodulation, I/Q demodulation, baseband signals.</p>


Author(s):  
G Vasudeva ◽  
Uma B. V.

Differential Amplifier is a primary building block of analog and mixed signal circuit for pre-processing and signal conditioning of analog signal. FINFET devices with high-k gate oxide at 22nm technology are predominantly used for high speed and low power complex VLSI circuits. FINFET based differential amplifiers are widely used in ADC’s and signal Processing applications due to their advantages in terms of power dissipation. Analog front end of complex VLSI circuits need to offer high gain, higher stability and low noise figure. Designing of FINFET based VLSI sub-circuits requires proper design procedure that can provide designers flexibility in controlling the circuit performances. In this paper, differential amplifier is designed using model parameters of high-k FINFET in 22nm technology. The conventional procedures for designing MOSFET based differential amplifier are modified for designing FINFET based differential amplifier. Schematic capture is carried out in Cadence environment and simulations are obtained considering 22nm FINFET PDK. The performance metrics are evaluated and optimized considering multiple iterations. The designed differential amplifier has slew rate of 6V/µSec and settling time of 0.9 µSec which is a desired metric for ADCs. Power Supply Rejection Ratio (PSRR) is 83 dB and dynamic range is 1.6754 V. Open loop DC gain of DA is achieved to be 103 dB with phase margin of 630 that demonstrates the advantages of DA designed in this work suitable for analog front end


Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh ◽  
Nguyen Xuan Truong ◽  
Nguyen Huu Duc ◽  
Bach Gia Duong

<p>This paper focuses on the design and implementation of a front-end for a Vinasat satellite receiver with auto-searching mechanism and auto-tracking satellite. The front-end consists of a C-band low-noise block down-converter and a L-band receiver. The receiver is designed to meet the requirements about wide-band, high sensitivity, large dynamic range, low noise figure. To reduce noise figure and increase bandwidth, the C-band low-noise amplifier is designed using T-type of matching network with negative feedback and the L-band LNA is designed using cascoded techniques. The local oscillator uses a voltage controlled oscillator combine phase locked loop to reduce the phase noise and select channels. The front-end has successfully been designed and fabricated with parameters: Input frequency is C-band; sensitivity is greater than -130 dBm for C-band receiver and is greater than -110dBm for L-band receiver; output signals are AM/FM demodulation, I/Q demodulation, baseband signals.</p>


Author(s):  
Takana Kaho ◽  
Yo Yamaguchi ◽  
Hiroyuki Shiba ◽  
Munenari Kawashima ◽  
Hideki Toshinaga ◽  
...  

2006 ◽  
Vol 113 ◽  
pp. 453-458 ◽  
Author(s):  
R. Navickas ◽  
V. Barzdenas

Hybrid pixel sensors (detectors) have shown to be a valid alternative to other types of Xray imaging devices due to their high sensitivity, linear behavior and wide dynamic range, and low noise. One important feature of these devices is the fact that detectors and readout electronics are manufactured separately. The charge created by the interaction of X-ray photons in the sensor is very small and has to be amplified in a low-noise circuit before any further signal processing. The signal induced on the electrodes of the sensor is transferred to the readout chip, where it is integrated in a charge sensitive amplifier. The issue reviews on physical principles of operation and design of the hybrid pixel sensors developed on the basis of the silicon CMOS and GaAs MESFETtechnologies. The authors have designed GaAs charge sensitive amplifiers for hybrid pixel detectors and show the results of a simulation.


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