scholarly journals CONDITION OF THE TREATED SURFACE OF NIOBIUM-BASED ALLOY WHEN GRINDING FROM SILICON CARBIDE

2021 ◽  
pp. 27-30
Author(s):  
V. A. Nosenko ◽  
A. V. Fetisov ◽  
S. P. Kuznetsov ◽  
V. G. Karpov
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Metal Atom ◽  
Mechanical Action ◽  
Grinding Wheel ◽  
Wheel Material ◽  
Cohesive Interaction ◽  
Ground Material ◽  
Electronic Microscope

The study of the surface of silicon carbide after grinding niobium was carried out on a Versa 3D electronic microscope. It is shown that as a result of the grinding, traces of the grinding wheel material are formed on the treated surface, and the ground material itself is prone to adhesion to the grinding wheel. As a result of cohesive interaction, the metal adhering to the grinding wheel is transferred, and vice versa. And, as a result of adhesion-fatigue processes, mechanical action, there is a hanging wear of the grinding wheel and the indentation of individual crystals of silicon carbide into the surface of the metal being processed. This article examines such features of the behavior of niobium, when grinding it with silicon wheels and is considered from the standpoint of the electronic structure of the metal atom.

Effect of the Type of Grinding Wheel on the Surface Characteristics of a Titanium Alloy with Internal Coolant Supply

2019 ◽  
Vol 825 ◽  
pp. 92-98
Author(s):  
Nakatsuka Nagatoshi ◽  
Sumito Toyokawa ◽  
Atsushi Kusakabe ◽  
Shinya Nakatsukasa ◽  
Hiroyuki Sasahara
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Silicon Carbide ◽  
Titanium Alloy ◽  
Aluminum Oxide ◽  
Compressive Residual Stress ◽  
Surface Characteristics ◽  
Grinding Wheel

The objective of this paper is to clarify the effect of grinding surface characteristics in the grinding of a titanium alloy with a coolant supply from the inner side of the grinding wheel. In this paper, we selected a white aluminum oxide (WA) vitrified bonded grinding wheel and a green silicon carbide (GC) vitrified bonded grinding wheel, and compared their grinding characteristics. As a result, in the case of the GC vitrified bonded grinding wheel, the surface roughness decreased by about 54% and the compressive residual stress increased by about 128%.

Electronic Structure of Boron in Silicon Carbide

1993 ◽  
Vol 103-105 ◽  
pp. 645-654
Author(s):  
V.Ya. Bratus ◽  
N.P. Baran ◽  
A.A. Bugai ◽  
A.A. Klimov ◽  
V.M. Maksimenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure

Electronic structure of silicon carbide containing superstoichiometric carbon

1999 ◽  
Vol 48 (3) ◽  
pp. 612-615 ◽  
Author(s):  
A. L. Ivanovskii ◽  
N. I. Medvedeva ◽  
G. P. Shveikin
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure

Electronic Structure and Spectra of Niobium Metal Atom Clusters

1968 ◽  
Vol 48 (2) ◽  
pp. 843-851 ◽  
Author(s):  
Robert F. Schneider ◽  
Raymond A. Mackay
Keyword(s):  
Electronic Structure ◽  
Metal Atom ◽  
Atom Clusters

5d transition-metal atom/5d–3d dimer adsorption tailored electronic structure and magnetic anisotropy of two-dimensional WSe2 monolayers

2020 ◽  
Vol 8 (33) ◽  
pp. 11417-11425 ◽  
Author(s):  
Chi Zhang ◽  
Xiaocha Wang ◽  
Wenbo Mi
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Magnetic Anisotropy ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Two Dimensional ◽  
Potential Applications

Two-dimensional (2D) WSe2 monolayers have attracted much attention due to their unique electronic structure, and have potential applications in nanoelectronic, optoelectronic, spintronic and valleytronic devices.

NC-Form Grinding of Carbon Fibre Reinforced Silicon Carbide Composite

2013 ◽  
Vol 535-536 ◽  
pp. 314-317 ◽  
Author(s):  
E. Uhlmann ◽  
T. Borsoi Klein ◽  
L. Schweitzer ◽  
A. Neubrand
Keyword(s):  
Silicon Carbide ◽  
Carbon Fibre ◽  
High Performance ◽  
Wear Behavior ◽  
Experimental Investigations ◽  
Grinding Wheel ◽  
Machining Parameters ◽  
Wheel Wear ◽  
Carbide Composite ◽  
Form Grinding

This paper presents an approach for the development and optimization of the NC-form grinding technology for an efficient machining of carbon fibre reinforced silicon carbide composite (C/SiC). The C/SiC properties, the importance and the necessity of the application of a high performance grinding process for the machining of this innovative composite material are introduced first. Then, the methodologies and the experimental investigations of NC-form grinding with the application of several machining parameters and three distinct bond types (vitrified, metal and synthetic resin) of diamond mounted points for the abrasive machining of C/SiC are presented. In order to monitor and analyze the process, grinding forces, surface integrity of ground workpieces and grinding wheel wear are investigated. The results of this paper provide new information regarding the wear behavior of grinding tools and the optimized conditions for grinding of C/SiC

Electronic Structure of Ru2 Si3

1991 ◽  
Vol 234 ◽  
Author(s):  
P. Pecheur ◽  
G. Toussaint
Keyword(s):  
Electronic Structure ◽  
Transition Metal ◽  
Metal Atom ◽  
Electron Concentration ◽  
Valence Electron ◽  
Tight Binding ◽  
Transition Metal Atom ◽  
Valence Electron Concentration ◽  
Tight Binding Method ◽  
The Stability

ABSTRACTThe electronic structure of Ru2Si3 has been calculated with the empirical tight binding method and the recursion procedure. The calculation strongly indicates that there exists a gap in the structure, which makes Ru2Si3 semiconducting, as found experimentally and explains the stability of the chimney-ladder phases for a valence electron concentration per transition metal atom smaller than 14.

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