Anomalous field effect and slow relaxation in an AlGaN/GaN quantum well

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab8841 ◽

2020 ◽

Vol 59 (5) ◽

pp. 055501

Author(s):

Huayao Tu ◽

Kuanghong Gao ◽

Songran Zhang ◽

Guolin Yu ◽

Yan Sun ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Slow Relaxation ◽

Anomalous Field

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In-plane magnetic-field effect on transport properties of the chiral edge state in a quasi-three-dimensional quantum well structure

Physical Review B ◽

10.1103/physrevb.60.8743 ◽

1999 ◽

Vol 60 (12) ◽

pp. 8743-8747 ◽

Author(s):

B. Zhang ◽

J. Brooks ◽

Z. Wang ◽

J. Simmons ◽

J. Reno ◽

...

Keyword(s):

Magnetic Field ◽

Quantum Well ◽

Transport Properties ◽

Field Effect ◽

Three Dimensional ◽

Magnetic Field Effect ◽

Quantum Well Structure

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Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In x Ga 1− x N/GaN quantum well

Chinese Physics B ◽

10.1088/1674-1056/21/10/107103 ◽

2012 ◽

Vol 21 (10) ◽

pp. 107103 ◽

Author(s):

Feng-Qi Zhao ◽

Mei Yong

Keyword(s):

Electric Field ◽

Quantum Well ◽

Field Effect ◽

Electric Field Effect ◽

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Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch

Applied Physics Letters ◽

10.1063/1.108358 ◽

1992 ◽

Vol 61 (16) ◽

pp. 1904-1906 ◽

Author(s):

K. G. Ravikumar ◽

T. Aizawa ◽

S. Suzaki ◽

R. Yamauchi

Keyword(s):

Electric Field ◽

Quantum Well ◽

Field Effect ◽

Optical Switch ◽

Electric Field Effect ◽

Strained Quantum Well ◽

Polarization Independent

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Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors

Electronics Letters ◽

10.1049/el.2016.0328 ◽

2016 ◽

Vol 52 (10) ◽

pp. 842-844 ◽

Author(s):

Wenjun Li ◽

Patrick Fay ◽

Tao Yu ◽

Judy Hoyt

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Detection Performance ◽

Microwave Detection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ingaas Quantum Well

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

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A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

Applied Physics Express ◽

10.1143/apex.5.064002 ◽

2012 ◽

Vol 5 (6) ◽

pp. 064002 ◽

Author(s):

Jianqiang Lin ◽

Tae-Woo Kim ◽

Dimitri A. Antoniadis ◽

Jesús A. del Alamo

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Front End ◽

Effect Transistor ◽

Lift Off ◽

Ingaas Quantum Well

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Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

Microelectronic Engineering ◽

10.1016/j.mee.2016.06.017 ◽

2016 ◽

Vol 163 ◽

pp. 115-118

Author(s):

Jiao Wen ◽

Qiang Liu ◽

Chang Liu ◽

Yize Wang ◽

Bo Zhang ◽

...

Keyword(s):

Quantum Well ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Sensitivity ◽

Effect Transistor

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