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Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors
Electronics Letters
◽
10.1049/el.2016.0328
◽
2016
◽
Vol 52
(10)
◽
pp. 842-844
◽
Cited By ~ 8
Author(s):
Wenjun Li
◽
Patrick Fay
◽
Tao Yu
◽
Judy Hoyt
Keyword(s):
Quantum Well
◽
Field Effect
◽
Field Effect Transistors
◽
Detection Performance
◽
Microwave Detection
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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
Applied Physics Letters
◽
10.1063/1.4870257
◽
2014
◽
Vol 104
(13)
◽
pp. 131605
◽
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Author(s):
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◽
Dmitry Veksler
◽
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◽
Andrew Greene
◽
Michael Yakimov
◽
...
Keyword(s):
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Metal Oxide
◽
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◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Trap Density
◽
Oxide Semiconductor
◽
Interface Trap Density
◽
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◽
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A semi-analytical model for III-V semiconductor quantum well field effect transistors
2014 International Conference on Electrical Engineering and Information & Communication Technology
◽
10.1109/iceeict.2014.6919039
◽
2014
◽
Author(s):
M. S. Rahman
◽
M. S. Islam
◽
A. Haque
Keyword(s):
Quantum Well
◽
Analytical Model
◽
Field Effect
◽
Field Effect Transistors
◽
Well Field
◽
Semiconductor Quantum Well
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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
IEEE Electron Device Letters
◽
10.1109/led.2015.2438433
◽
2015
◽
Vol 36
(7)
◽
pp. 672-674
◽
Cited By ~ 15
Author(s):
Tae-Woo Kim
◽
Hyuk-Min Kwon
◽
Seung Heon Shin
◽
Chan-Soo Shin
◽
Won-Kyu Park
◽
...
Keyword(s):
High Pressure
◽
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
Ingaas Quantum Well
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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
◽
10.1109/edtm47692.2020.9117824
◽
2020
◽
Author(s):
T. Maeda
◽
H. Ishii
◽
W. H. Chang
◽
H. Kanaya
◽
T. Asano
Keyword(s):
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Thz Wave
◽
Wave Detection
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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications
2009 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2009.5424361
◽
2009
◽
Cited By ~ 48
Author(s):
M. Radosavljevic
◽
B. Chu-Kung
◽
S. Corcoran
◽
G. Dewey
◽
M. K. Hudait
◽
...
Keyword(s):
Quantum Well
◽
Silicon Substrate
◽
Field Effect
◽
High Performance
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Short Channel
◽
High K
◽
Well Field
◽
Low Power Logic
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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131661
◽
2011
◽
Cited By ~ 95
Author(s):
M. Radosavljevic
◽
G. Dewey
◽
D. Basu
◽
J. Boardman
◽
B. Chu-Kung
◽
...
Keyword(s):
Quantum Well
◽
Field Effect
◽
Gate Dielectric
◽
Field Effect Transistors
◽
Source Separation
◽
Thin Body
◽
High K
◽
Well Field
◽
Ingaas Quantum Well
◽
High K Gate Dielectric
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Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well
IEEE Electron Device Letters
◽
10.1109/55.748904
◽
1999
◽
Vol 20
(3)
◽
pp. 109-112
◽
Cited By ~ 7
Author(s):
D. Xu
◽
J. Osaka
◽
Y. Umeda
◽
T. Suemitsu
◽
Y. Yamane
◽
...
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Quantum Well
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Field Effect
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Field Effect Transistors
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Ingaas Quantum Well
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III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications
2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
◽
10.1109/csics.2011.6062431
◽
2011
◽
Cited By ~ 2
Author(s):
G. Dewey
◽
M. Radosavljevic
◽
N. Mukherjee
Keyword(s):
Quantum Well
◽
Low Power
◽
Field Effect
◽
High Performance
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Field Effect Transistors
◽
Well Field
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Low Power Logic
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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors
IEEE Transactions on Electron Devices
◽
10.1109/16.59906
◽
1990
◽
Vol 37
(10)
◽
pp. 2171-2175
◽
Cited By ~ 26
Author(s):
P.P. Ruden
◽
M. Shur
◽
A.I. Akinwande
◽
J.C. Nohava
◽
D.E. Grider
◽
...
Keyword(s):
Quantum Well
◽
Field Effect
◽
Field Effect Transistors
◽
Heterostructure Field Effect Transistors
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Enhancement of protein detection performance in field-effect transistors with polymer residue-free graphene channel
Carbon
◽
10.1016/j.carbon.2013.05.069
◽
2013
◽
Vol 62
◽
pp. 312-321
◽
Cited By ~ 12
Author(s):
Jin Heak Jung
◽
Il Yung Sohn
◽
Duck Jin Kim
◽
Bo Yeong Kim
◽
Mi Jang
◽
...
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Protein Detection
◽
Detection Performance
◽
Free Graphene
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