Microwave detection performance of In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 quantum‐well tunnel field‐effect transistors

Electronics Letters ◽

10.1049/el.2016.0328 ◽

2016 ◽

Vol 52 (10) ◽

pp. 842-844 ◽

Author(s):

Wenjun Li ◽

Patrick Fay ◽

Tao Yu ◽

Judy Hoyt

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Detection Performance ◽

Microwave Detection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Quantum Well

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ingaas Quantum Well

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Short Channel ◽

High K ◽

Low Power Logic

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum well

IEEE Electron Device Letters ◽

10.1109/55.748904 ◽

1999 ◽

Vol 20 (3) ◽

pp. 109-112 ◽

Author(s):

D. Xu ◽

J. Osaka ◽

Y. Umeda ◽

T. Suemitsu ◽

Y. Yamane ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Ingaas Quantum Well

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III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2011.6062431 ◽

2011 ◽

Author(s):

G. Dewey ◽

M. Radosavljevic ◽

N. Mukherjee

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Low Power Logic

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.59906 ◽

1990 ◽

Vol 37 (10) ◽

pp. 2171-2175 ◽

Author(s):

P.P. Ruden ◽

M. Shur ◽

A.I. Akinwande ◽

J.C. Nohava ◽

D.E. Grider ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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Enhancement of protein detection performance in field-effect transistors with polymer residue-free graphene channel

Carbon ◽

10.1016/j.carbon.2013.05.069 ◽

2013 ◽

Vol 62 ◽

pp. 312-321 ◽

Author(s):

Jin Heak Jung ◽

Il Yung Sohn ◽

Duck Jin Kim ◽

Bo Yeong Kim ◽

Mi Jang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Protein Detection ◽

Detection Performance ◽

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