X-ray photoelectron spectroscopy insights on interfaces between SiO2 films and GaN substrates: differences due to depositional technique

2020 ◽  
Vol 59 (9) ◽  
pp. 090902
Author(s):  
Noritake Isomura ◽  
Narumasa Soejima ◽  
Tomohiko Mori ◽  
Satoshi Ikeda ◽  
Atsushi Watanabe ◽  
...  
2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.


2005 ◽  
Vol 475-479 ◽  
pp. 3709-3712 ◽  
Author(s):  
Li Ping Feng ◽  
Zheng Tang Liu

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3~5 µm.


2006 ◽  
Vol 500 (1-2) ◽  
pp. 356-359 ◽  
Author(s):  
Kyung Joong Kim ◽  
Ki Tae Park ◽  
Jong Wan Lee

1998 ◽  
Vol 72 (6) ◽  
pp. 725-727 ◽  
Author(s):  
Katsuhiko Furukawa ◽  
Yichun Liu ◽  
Hiroshi Nakashima ◽  
Dawei Gao ◽  
Kiichiro Uchino ◽  
...  

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1025-C9-1028 ◽  
Author(s):  
W. ZAHOROWSKI ◽  
A. SIMUNEK ◽  
G. WIECH ◽  
K. SÖLDNER ◽  
R. KNAUF ◽  
...  

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