Observation of Si cluster formation in SiO2 films through annealing process using x-ray photoelectron spectroscopy and infrared techniques

Metal oxynitride (VxON, CrxON) thin film has been fabricated by reactive dc sputtering method and annealing process. Its electrochemical properties are investigated in a MxON/Li cell. The reversible specific capacities are around 830 mAh g-1 for VxON and 730 mAh g-1 for CrxON. By using selected-area electron diffraction and X-ray photoelectron spectroscopy measurements, New electrochemical reaction mechanism is uncovered, which should be responsible for its good electrochemical performance.

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Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

MRS Proceedings ◽

10.1557/proc-611-c4.5.1 ◽

2000 ◽

Vol 611 ◽

Author(s):

Akira Izumi ◽

Hidekazu Sato ◽

Hideki Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

Catalytic Decomposition ◽

Catalytic Chemical Vapor Deposition ◽

Sio2 Films ◽

X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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Optical Properties of Silica Films Prepared on Sapphire

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3709 ◽

2005 ◽

Vol 475-479 ◽

pp. 3709-3712 ◽

Cited By ~ 1

Author(s):

Li Ping Feng ◽

Zheng Tang Liu

Keyword(s):

Refractive Index ◽

Optical Properties ◽

Photoelectron Spectroscopy ◽

Gas Flow ◽

Silica Films ◽

Sio2 Films ◽

X Ray ◽

Gas Flow Ratio ◽

Optical And Mechanical Properties ◽

Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

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Comparing Isoelectric Point and Surface Composition of Plasma Modified Native and Deposited SiO2 Films Using Contact Angle Titrations and X-ray Photoelectron Spectroscopy

Plasma Processes and Polymers ◽

10.1002/ppap.201100010 ◽

2011 ◽

Vol 8 (10) ◽

pp. 951-964 ◽

Cited By ~ 10

Author(s):

Kristina J. Trevino ◽

Jeffrey C. Shearer ◽

Brendan D. Tompkins ◽

Ellen R. Fisher

Keyword(s):

Contact Angle ◽

Isoelectric Point ◽

Photoelectron Spectroscopy ◽

Surface Composition ◽

Sio2 Films ◽

X Ray

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The effect of additional sulfur on solution-processed pure sulfide Cu2ZnSnS4 solar cell absorber layers

MRS Advances ◽

10.1557/adv.2016.425 ◽

2016 ◽

Vol 1 (41) ◽

pp. 2815-2820 ◽

Cited By ~ 4

Author(s):

Zhengfei Wei ◽

Miao Zhu ◽

James D. McGettrick ◽

Gabriela P. Kissling ◽

Laurence M. Peter ◽

...

Keyword(s):

Sulfur Content ◽

Photoelectron Spectroscopy ◽

Depth Profiling ◽

Precursor Solution ◽

Annealing Process ◽

Elemental Distribution ◽

X Ray ◽

Post Annealing ◽

Compositional Study ◽

Scanning Electron

ABSTRACTTo reduce the amount of chalcogen needed in the post-annealing process, we demonstrate significantly increased sulfur incorporation into pure sulfide CZTS films achieved by increasing the thiourea content of DMSO-based precursor solution. The increase of sulfur content was confirmed by thermogravimetric analyses (TGA). To understand how the elemental distribution across the CZTS layer is affected by extra thiourea, a systematic compositional study was carried out using X-ray photoelectron spectroscopy (XPS). XPS depth profiling reveals increased sulfur incorporation in the final CZTS films when more thiourea is added to the solution. The grain size was reduced slightly with increased sulfur content and the surface morphology was changed significantly. The effect on the surface of the CZTS film has been investigated using scanning electron microscopy (SEM), Raman spectroscopy, and XPS. External-quantum-efficiency (EQE) measurements with an electrolyte contact were used to investigate the optoelectronic properties of the deposited CZTS films.

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Stress Relaxation in Sandwiched Si3N4/Al/Si3N4 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.89-91.91 ◽

2010 ◽

Vol 89-91 ◽

pp. 91-96

Author(s):

G.R. Chang ◽

Fei Ma ◽

B. Ma ◽

Ke Wei Xu

Keyword(s):

Thin Films ◽

Stress Relaxation ◽

Photoelectron Spectroscopy ◽

Annealing Process ◽

Sharp Rise ◽

X Ray ◽

Curvature Measurement ◽

In Situ Investigation ◽

Scanning Electron

An in-situ investigation was performed on the stress relaxation of sandwiched Si3N4/Al/Si3N4 thin films by using multi-beam optical stress sensor (MOSS), a developed technique for substrate curvature measurement. Furthermore, the microstructures of the thin films were characterized by several analyzing techniques, such as X-ray Photoelectron Spectroscopy (XPS), Field Emission Scanning Electron Microscope (FE-SEM) and X-ray energy dispersive spectroscopy (EDS). The results indicated sharp rise and drop of the residual stress due to the cracks of Si3N4 surface layer or the separation of Al particles during annealing process. An appropriate model was suggested to interpret this phenomenon.

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