Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

Applied Surface Science ◽

10.1016/j.apsusc.2011.11.110 ◽

2012 ◽

Vol 258 (8) ◽

pp. 3552-3556 ◽

Cited By ~ 6

Author(s):

Kyung Joong Kim ◽

Seung Mi Lee ◽

Jong Shik Jang ◽

Mona Moret

Keyword(s):

Oxide Film ◽

Oxide Layer ◽

Photoelectron Spectroscopy ◽

Thickness Measurement ◽

X Ray

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Optical Properties of Silica Films Prepared on Sapphire

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3709 ◽

2005 ◽

Vol 475-479 ◽

pp. 3709-3712 ◽

Cited By ~ 1

Author(s):

Li Ping Feng ◽

Zheng Tang Liu

Keyword(s):

Refractive Index ◽

Optical Properties ◽

Photoelectron Spectroscopy ◽

Gas Flow ◽

Silica Films ◽

Sio2 Films ◽

X Ray ◽

Gas Flow Ratio ◽

Optical And Mechanical Properties ◽

Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

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Comparing Isoelectric Point and Surface Composition of Plasma Modified Native and Deposited SiO2 Films Using Contact Angle Titrations and X-ray Photoelectron Spectroscopy

Plasma Processes and Polymers ◽

10.1002/ppap.201100010 ◽

2011 ◽

Vol 8 (10) ◽

pp. 951-964 ◽

Cited By ~ 10

Author(s):

Kristina J. Trevino ◽

Jeffrey C. Shearer ◽

Brendan D. Tompkins ◽

Ellen R. Fisher

Keyword(s):

Contact Angle ◽

Isoelectric Point ◽

Photoelectron Spectroscopy ◽

Surface Composition ◽

Sio2 Films ◽

X Ray

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Uncertainty Evaluation in Measurement of Thickness of SiO2/Si Using X-Ray Photoelectron Spectroscopy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.915-916.833 ◽

2014 ◽

Vol 915-916 ◽

pp. 833-837

Author(s):

Jiang Wei Fan ◽

Xiao Gang Han ◽

Feng Wang

Keyword(s):

Thin Film ◽

Thin Films ◽

Photoelectron Spectroscopy ◽

Measurement Method ◽

Uncertainty Budget ◽

Thickness Measurement ◽

Quantitative Model ◽

X Ray ◽

Nominal Thickness ◽

Measurement Of Thickness

Ultra-thin films of SiO2 (nominally 2, 4, 6, 8 and 10nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these thin films was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide layers by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of the most importance in the contribution of the uncertainties. For the SiO2 ultra-thin film with the nominal thickness of 2nm, it could generate 20% of the uncertainty.

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