Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements

We report on time-dependent Positron annihilation induced Auger Electron Spectroscopy (PAES) study on 0.5 monolayers (ML) Ni on polycrystalline Pd accompanied by complementary X-ray induced Photoelectron Spectroscopy (XPS). The normalized PAES spectra showed a significant decrease in the Ni intensity and an increase in the Pd intensity as a function of time. To rule out varying influence on the elements e.g. from surface contaminates due to the residual gas, a time-dependent XPS analysis was performed on pure Ni and Pd as well as to analyze the main contaminants C and O. The O fraction was found to be constant within the measurement time and the time constants for C significantly differ from those of Ni and Pd in the PAES data. Consequently, it was concluded that the PAES data show a superposition of C contamination and structural changes at the surface of Ni/Pd.

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Time-Dependent X-Ray Photoelectron Spectroscopy Observed for Dimethylaluminum Hydride Adsorbed onSiO2

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.5233 ◽

1997 ◽

Vol 36 (Part 1, No. 8) ◽

pp. 5233-5236

Author(s):

Hidetaka Koya ◽

Mitsugu Hanabusa

Keyword(s):

Photoelectron Spectroscopy ◽

Time Dependent ◽

X Ray ◽

Dimethylaluminum Hydride

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Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

MRS Proceedings ◽

10.1557/proc-611-c4.5.1 ◽

2000 ◽

Vol 611 ◽

Author(s):

Akira Izumi ◽

Hidekazu Sato ◽

Hideki Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Chemical Vapor ◽

Catalytic Decomposition ◽

Catalytic Chemical Vapor Deposition ◽

Sio2 Films ◽

X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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The time-dependent process of oxidation of the surface of Bi2Te3studied by x-ray photoelectron spectroscopy

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/12/26/307 ◽

2000 ◽

Vol 12 (26) ◽

pp. 5607-5616 ◽

Cited By ~ 81

Author(s):

H Bando ◽

K Koizumi ◽

Y Oikawa ◽

K Daikohara ◽

V A Kulbachinskii ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Time Dependent ◽

X Ray ◽

Time Dependent Process ◽

Dependent Process

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The Role of Physisorption and Chemisorption in the Oscillatory Adsorption of Organosilanes on Aluminium Oxide

Polymers ◽

10.3390/polym11030410 ◽

2019 ◽

Vol 11 (3) ◽

pp. 410 ◽

Cited By ~ 8

Author(s):

Ruby Sims ◽

Sarah Harmer ◽

Jamie Quinton

Keyword(s):

Photoelectron Spectroscopy ◽

Self Assembly ◽

Film Growth ◽

Aluminium Oxide ◽

Time Dependent ◽

Chemical Binding ◽

X Ray ◽

Assembly Mechanism ◽

Film Substrate

The effect of physisorbed and chemisorbed species on the time-dependent self-assembly mechanism of organosilane films has been investigated on aluminium oxide using X-ray Photoelectron Spectroscopy. The role of physisorbed species was determined through their removal using a simple rinsing procedure while monitoring film substrate coverage. Removing physisorbed species from Propyldimethylmethoxysilane films, shown to follow a Langmuir-type adsorption profile, reduces the substrate coverage initially but quickly results in coverages equivalent to films that did not undergo a rinsing procedure. This indicates that all Propyldimethylmethoxysilane molecules are covalently bound to the substrate following 15 s of film growth. Removing physisorbed species from films, which have been shown to follow an oscillatory adsorption profile, Propyltrimethoxysilane and Propylmethyldimethoxysilane, reveal the persistence of these oscillations despite a reduction in silane substrate coverage. These results not only confirm the presence of two thermodynamically favourable phases in the condensation equilibrium reaction as physisorbed and chemisorbed species, but also indicate that the desorption of species during film growth involves both states of chemical binding.

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Optical Properties of Silica Films Prepared on Sapphire

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3709 ◽

2005 ◽

Vol 475-479 ◽

pp. 3709-3712 ◽

Cited By ~ 1

Author(s):

Li Ping Feng ◽

Zheng Tang Liu

Keyword(s):

Refractive Index ◽

Optical Properties ◽

Photoelectron Spectroscopy ◽

Gas Flow ◽

Silica Films ◽

Sio2 Films ◽

X Ray ◽

Gas Flow Ratio ◽

Optical And Mechanical Properties ◽

Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

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