Analytical models for inter-layer tunneling in two-dimensional materials

2021 ◽  
Author(s):  
Nobuya Mori ◽  
Futo Hashimoto ◽  
Takaya Mishima ◽  
Hajime Tanaka
Keyword(s):  
Analytical Formula ◽  
Transmission Function ◽  
Tunneling Current ◽  
Channel Length ◽  
Analytical Models ◽  
Tunneling Conductance ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Band To Band Tunneling ◽  
Different Characteristics

Abstract Analytical formula of the transmission function of the inter-layer intra-band tunneling is derived for coupled narrow two-dimensional materials. Analytical models of the intra-band tunneling conductance G, the transmission function of the inter-layer band-to-band tunneling, and the maximum band-to-band tunneling current Imax, are also obtained. G and Imax are shown to exhibit different characteristics depending on the channel length.

scholarly journals Anisotropic carrier mobility in two-dimensional materials with tilted Dirac cones: theory and application

2017 ◽  
Vol 19 (35) ◽  
pp. 23942-23950 ◽  
Author(s):  
Ting Cheng ◽  
Haifeng Lang ◽  
Zhenzhu Li ◽  
Zhongfan Liu ◽  
Zhirong Liu
Keyword(s):  
Carrier Mobility ◽  
Analytical Formula ◽  
Two Dimensional ◽  
Two Dimensional Materials

An analytical formula for the carrier mobility in semimetals with tilted Dirac cones was obtained, and applied to 8B-Pmmn borophene and 2BH-Pmmn borophane.

scholarly journals Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

2020 ◽  
Author(s):  
Boris Senkovskiy ◽  
Alexey Nenashev ◽  
Seyed Alavi ◽  
Yannic Falke ◽  
Martin Hell ◽  
...  
Keyword(s):  
Charge Transport ◽  
Graphene Nanoribbons ◽  
Tunneling Current ◽  
Spectroscopic Properties ◽  
Channel Length ◽  
Wide Bandgap ◽  
Scanning Tunneling ◽  
Tunneling Conductance ◽  
Tunneling Microscopy ◽  
Current Voltage

Abstract Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via a new concept in sensing, namely the modulation of the tunneling barriers by adsorbates.

Redox-Active Approach Towards New Magnetic And Conductive Two-Dimensional Materials

2018 ◽  
Author(s):  
Penny Perlepe ◽  
Rodolphe Clérac ◽  
Itziar Oyarzabal ◽  
Corine Mathonière
Keyword(s):  
Two Dimensional ◽  
Active Approach ◽  
Redox Active ◽  
Two Dimensional Materials

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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