High-frequency rectifying characteristics of metallic single-electron transistor with niobium nanodots

Abstract Metallic single-electron transistors (SETs) with niobium nanodots were fabricated, and their high-frequency rectifying characteristics were evaluated. By reducing the gap size of the electrodes and film deposition area to nanometer scale, improved SET characteristics with gate control, and better frequency response of the rectifying current with gentler decrease than 1/f at high frequency were achieved. The comparison between the characteristics of micrometer- and nanometer-size devices are made, and the reason for their differences are discussed with a help of simulation based on the experimentally extracted parameters.

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A Nanodamascene Process to be used as a Building Block for Nanodevices

MRS Proceedings ◽

10.1557/proc-0961-o10-07 ◽

2006 ◽

Vol 961 ◽

Author(s):

Christian Dubuc ◽

Jacques Beauvais ◽

Dominique Drouin

Keyword(s):

High Resolution ◽

Building Block ◽

Chemical Mechanical Polishing ◽

Silicon Oxide ◽

Single Electron ◽

Single Electron Transistor ◽

Filling Material ◽

Single Electron Transistors ◽

Electron Transistors ◽

Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

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Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors

10.7567/ssdm.1997.b-13-3 ◽

1997 ◽

Author(s):

Seiya Kasai ◽

Yoshihiro Satoh ◽

Hiroshi Okada ◽

Tamotsu Hashizume ◽

Hideki Hasegawa

Keyword(s):

Quantum Dots ◽

Single Electron ◽

Single Electron Transistors ◽

Gate Control ◽

Electron Transistors

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Robust and fault-tolerant circuit design for nanometer-scale devices and single-electron transistors

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512) ◽

10.1109/iscas.2004.1328839 ◽

2004 ◽

Cited By ~ 2

Author(s):

A. Schmid ◽

Y. Leblebici

Keyword(s):

Circuit Design ◽

Fault Tolerant ◽

Single Electron ◽

Nanometer Scale ◽

Single Electron Transistors ◽

Electron Transistors

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Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

IEEE Transactions on Electron Devices ◽

10.1109/16.992872 ◽

2002 ◽

Vol 49 (4) ◽

pp. 627-635 ◽

Cited By ~ 24

Author(s):

Dae Hwan Kim ◽

Suk-Kang Sung ◽

Kyung Rok Kim ◽

Jong Duk Lee ◽

Byung-Gook Park ◽

...

Keyword(s):

Single Electron ◽

Single Electron Transistor ◽

Single Electron Transistors ◽

Electron Transistors

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Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1584 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1584-1590 ◽

Cited By ~ 1

Author(s):

Yoshihiro Satoh ◽

Seiya Kasai ◽

Kei-ichiroh Jinushi ◽

Hideki Hasegawa

Keyword(s):

Computer Simulation ◽

Single Electron ◽

Experimental Characterization ◽

Single Electron Transistors ◽

Gate Control ◽

Electron Transistors

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THE PHYSICS OF SINGLE ELECTRON TRANSISTORS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156402001940 ◽

2002 ◽

Vol 12 (04) ◽

pp. 1101-1133 ◽

Cited By ~ 5

Author(s):

M. A. KASTNER

Keyword(s):

Kondo Effect ◽

Quantitative Description ◽

Small Region ◽

Single Electron ◽

Single Electron Transistor ◽

Single Electron Transistors ◽

Nanometer Size ◽

Anderson Hamiltonian ◽

Artificial Atom ◽

Electron Transistors

The single electron transistor (SET) is a nanometer-size device that turns on and off again every time one electron is added to it. In this article, the physics of the SET is reviewed. The consequences of confining electrons to a small region of space are that both the charge and energy are quantized. We review how the charge states and energy states of the confined electrons, sometimes called an artificial atom, are measured, and how the precision of these measurements depends on temperature. We also discuss the coupling of electrons inside the artificial atom to those in the leads of the SET, which results in the Kondo effect. We review measurements of the Kondo effect, which demonstrate that the Anderson Hamiltonian provides a quantitative description of the SET.

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