scholarly journals Robust circuit and system design methodologies for nanometer-scale devices and single-electron transistors

2004 ◽  
Author(s):  
A. Schmid ◽  
Y. Leblebici
Keyword(s):  
System Design ◽  
Single Electron ◽  
Nanometer Scale ◽  
Single Electron Transistors ◽  
Design Methodologies ◽  
Circuit And System ◽  
Electron Transistors

High-frequency rectifying characteristics of metallic single-electron transistor with niobium nanodots

2021 ◽  
Author(s):  
Yoshiaki Iwata ◽  
Tomoki Nishimura ◽  
Alka Singh ◽  
Hiroaki Satoh ◽  
Hiroshi Inokawa
Keyword(s):  
High Frequency ◽  
Film Deposition ◽  
Single Electron ◽  
Nanometer Scale ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Deposition Area ◽  
Simulation Based ◽  
Gate Control ◽  
Electron Transistors

Abstract Metallic single-electron transistors (SETs) with niobium nanodots were fabricated, and their high-frequency rectifying characteristics were evaluated. By reducing the gap size of the electrodes and film deposition area to nanometer scale, improved SET characteristics with gate control, and better frequency response of the rectifying current with gentler decrease than 1/f at high frequency were achieved. The comparison between the characteristics of micrometer- and nanometer-size devices are made, and the reason for their differences are discussed with a help of simulation based on the experimentally extracted parameters.

scholarly journals Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105005
Author(s):  
Mitsuki Ito ◽  
Mamiko Yagi ◽  
Moe Shimada ◽  
Jun-ichi Shirakashi
Keyword(s):  
Single Electron ◽  
Single Electron Transistors ◽  
In Series ◽  
Electron Transistors

Single-Electron Transistors with Sidewall Depletion Gates on a Silicon-On-Insulator Nano-Wire

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2574-2577 ◽  
Author(s):  
Kyung Rok Kim ◽  
Dae Hwan Kim ◽  
Suk-Kang Sung ◽  
Jong Duk Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Measurements of Kondo and Spin Splitting in Single-Electron Transistors

2004 ◽  
Vol 93 (16) ◽  
Author(s):  
A. Kogan ◽  
S. Amasha ◽  
D. Goldhaber-Gordon ◽  
G. Granger ◽  
M. A. Kastner ◽  
...  
Keyword(s):  
Single Electron ◽  
Spin Splitting ◽  
Single Electron Transistors ◽  
Electron Transistors
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