Incorporation of a bipolar incremental step pulse programming with thermal forming to reduce the forming voltage in 1T1R structure resistance random access memory
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2018 ◽
Vol 39
(6)
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pp. 815-818
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2014 ◽
Vol 941-944
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pp. 1275-1278
2014 ◽
Vol 35
(6)
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pp. 630-632
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