scholarly journals Effect of Annealing on the Crystal Structure of COSI2/SI(100) Formed By MBE, SSE and RE Epitaxy Techniques

2019 ◽  
Vol 9 (1) ◽  
pp. 4813-4818
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Heat Treatment ◽  
Solid State ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Cobalt Ions ◽  
State Diagrams ◽  
Silicon Doped

The paper reports a number of new original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The results of studies of the CoSi2 /Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid state epitaxy (SSE), and other techniques are presented. Relations between morphology, stoichiometry, and growth conditions of CoSi2 / Si structures were established. The ratio of the intensities of the Auger signals of cobalt and silicon in the CoSi2 film, as well as silicon in CoSi2 and the silicon substrate was determined by the Auger profile of the sample. The authors determined that under certain conditions of heat treatment of the radiation on the surface of a single crystal, the so-called epitaxial silicides are formed which can play the role of conductive layers or metal coated. The structural state diagrams of CoSi2 / Si (100) thin-film systems formed by the MBE, SSE and other methods were compiled..

scholarly journals The Effect of Annealing On The Crystal Structure of the Surface of Silicon Doped With Iron And Cobalt Ions

2021 ◽  
Vol 12 (3) ◽  
pp. 3148-3155
Author(s):  
Egamberdiyev Bahrom Egamberdiyevich Et.al
Keyword(s):  
Crystal Structure ◽  
Heat Treatment ◽  
Annealing Temperature ◽  
Radiation Doses ◽  
Iron Cobalt ◽  
Cobalt Ions ◽  
Treatment Conditions ◽  
Silicon Doped ◽  
Metal Layers

The paper reports results of the study of the distribution profiles of implanted iron and cobalt atoms in silicon as a function of the radiation dose and annealing temperature that was performed by applying the Rutherford backscattering spectroscopy (RBS). The effects of thermal annealing on the distribution of iron, cobalt, and in particular oxygen were studied. The authors strongly suggest that under certain heat treatment conditions and by applying specific radiation doses, the so-called epitaxial silicides will build on the surface of a single crystal, which can play the role of conducting or metal layers. One could consider theRBS method for analysis of both the topological distribution of dopants and the interaction of impurities.

scholarly journals Solid state forms of 4-aminoquinaldine – from void structures with and without solvent inclusion to close packing

CrystEngComm ◽  
2015 ◽  
Vol 17 (12) ◽  
pp. 2504-2516 ◽  
Author(s):  
Doris E. Braun ◽  
Thomas Gelbrich ◽  
Volker Kahlenberg ◽  
Ulrich J. Griesser
Keyword(s):  
Crystal Structure ◽  
Solid State ◽  
Carbon Tetrachloride ◽  
Structure Prediction ◽  
Experimental Studies ◽  
Close Packing ◽  
Crystal Structure Prediction ◽  
Role Of Solvent

Crystal structure prediction combined with experimental studies unveil the structural and thermodynamic features of three non-solvated forms and a carbon tetrachloride solvate of 4-aminoquinaldine and provide intriguing insights into void structures and the role of solvent inclusion.

Li2CO3 thin films fabricated by sputtering techniques: the role of temperature on their properties

CrystEngComm ◽  
2014 ◽  
Vol 16 (27) ◽  
pp. 6033-6038 ◽  
Author(s):  
Lander Rojo ◽  
Irene Castro-Hurtado ◽  
María C. Morant-Miñana ◽  
Gemma G. Mandayo ◽  
Enrique Castaño
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Electrochemical Devices

This work present the first steps of thin film solid state electrochemical devices development based on Li2CO3.

Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

2005 ◽  
Vol 86 (5) ◽  
pp. 052101 ◽  
Author(s):  
R. M. Frazier ◽  
G. T. Thaler ◽  
J. Y. Leifer ◽  
J. K. Hite ◽  
B. P. Gila ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

Bls Studies of Exchange Coupling in The Iron Whisker/Cr/Fe System

1995 ◽  
Vol 384 ◽  
Author(s):  
J.F. Cochran ◽  
K. Totland ◽  
B. Heinrich ◽  
D. Venus ◽  
S. Govorkov
Keyword(s):  
Thin Film ◽  
Coupling Strength ◽  
Kerr Effect ◽  
Exchange Coupling ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Antiferromagnetic Coupling ◽  
Ferromagnetic Coupling ◽  
Film Magnetization

ABSTRACTBrillouin light scattering (BLS) and magneto-optic Kerr effect have been carried out on a series of specimens consisting of a Fe(001) whisker substrate upon which thin Cr(001) and Fe(001) layers have been deposited by means of molecular beam epitaxy in ultrahigh vacuum. The Fe film was 20 monolayers (ML) thick, and the Cr(001) films were grown having various thicknesses. It is demonstrated that BLS thin film frequencies measured in the saturated magnetic state with the thin film magnetization parallel with the applied magnetic field can be used to obtain the exchange coupling strength between the thin film and whisker magnetizations both for antiferromagnetic coupling and for ferromagnetic coupling, provided that the ferromagnetic coupling is not too strong. It is also shown that the coupling strength is extremely sensitive to the quality of the chromium growth: a small deterioration in the growth conditions has been found to reduce the exchange coupling by nearly a factor of two.

Sign in / Sign up

Export Citation Format

Share Document