scholarly journals Design and Analysis of Reconfigurable DMTL phase Shifter for High Speed Applications by Mechanical Tuning

2020 ◽  
Vol 9 (4) ◽  
pp. 333-339
Keyword(s):  
High Speed ◽  
Phase Shifter ◽  
Rf Mems ◽  
Planar Waveguides ◽  
Stress Factors ◽  
Mems Devices ◽  
Rf Switch ◽  
Switching Speed ◽  
Mems Switch ◽  
Mechanical Tuning

Tremendous advancement in the field of Radio-frequency were developed through Micro-fabrication techniques, these technologies miniaturize device in a micro-scale behavior for improved device performances. These technologies are developing rapidly due to its distinct features and wide usage in various applications ranging from switches to sensing devices. The principal behind this work is to build a MEMS based Reconfigurable DMTL phase shifter based on RF MEMS switch with improved device phenomenon like switching speed, low actuating voltage, losses and stress factors. The RF switch is build in a series behavior through co-planar waveguides. Generally switching speed is a major concern in RF MEMS devices because of the presence of the actuating elements within the structure which in turn hinders the device ability to function. The phase shifter designed helps in improving the overall switching speed of the device without electrical or dimension alternation of the device. In this paper, we are implementing a PUSH PULL based RF MEMS reconfigurable switch which was structurally altered based on triangular cantilevers in order to enhance the device switching speed. This would develop and enable better application in terms of reconfigurable phase shifter which can be operated at the wider bandgap applications. Even the resonant frequency enhancement was made which provokes an increase of 13% in terms of the switching speed.

Analysis and Design of a Robust RF MEMS Switch

2012 ◽  
Author(s):  
Ibrahim Chamseddine ◽  
Hadi Kasab ◽  
Maya Antoun ◽  
Tawfiq Dahdah ◽  
Mohammed Mirhi ◽  
...  
Keyword(s):  
Failure Modes ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Rf Switch ◽  
Switching Speed ◽  
Analysis And Design ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Switching Performance ◽  
Contact Adhesion

A MEMS RF switch is expected to undergo 10 billion switching cycles before failure. Until complete physical explanation for these failure modes that include contact adhesion, damping effects, stiction, increases in resistance with time, dielectric breakdown, and electron trapping is fully established, the technology’s numerous advantages cannot be harvested reliably and efficiently. This paper investigates prospective solutions to problems in switch designs by proposing a new design for the switch. We consider the new design from different perspectives: dynamic, electric, fluidic, etc. It is billed to overcome the difficulties and involves the implementation of liquid metal contact electrostatically actuated to ensure the same switching performance, with prolonged life span, and robust switching speed.

scholarly journals Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Deepak Bansal ◽  
Anuroop Bajpai ◽  
Prem Kumar ◽  
Maninder Kaur ◽  
Kamljit Rangra
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Electromagnetic Response ◽  
Mems Devices ◽  
Switching Speed ◽  
Capacitive Switch ◽  
Mems Switch ◽  
Line Insertion ◽  
Better Than

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

scholarly journals RF-MEMS Monolithic K and Ka Band Multi-State Phase Shifters as Building Blocks for 5G and Internet of Things (IoT) Applications

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2612 ◽  
Author(s):  
Jacopo Iannacci ◽  
Giuseppe Resta ◽  
Alvise Bagolini ◽  
Flavio Giacomozzi ◽  
Elena Bochkova ◽  
...  
Keyword(s):  
Internet Of Things ◽  
Communication Systems ◽  
High Speed ◽  
Phase Shifter ◽  
Satellite Communication ◽  
Rf Mems ◽  
Building Blocks ◽  
Phase Shifters ◽  
Small Cells ◽  
Mems Technology

RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) passive components, exhibit interesting characteristics for the upcoming 5G and Internet of Things (IoT) scenarios, in which reconfigurable broadband and frequency-agile devices, like high-order switching units, tunable filters, multi-state attenuators, and phase shifters will be necessary to enable mm-Wave services, small cells, and advanced beamforming. In particular, satellite communication systems providing high-speed Internet connectivity utilize the K and Ka bands, which offer larger bandwidth compared to lower frequencies. This paper focuses on two design concepts of multi-state phase shifter designed and manufactured in RF-MEMS technology. The networks feature 4 switchable stages (16 states) and are developed for the K and Ka bands. The proposed phase shifters are realized in a surface micromachining RF-MEMS technology and the experimentally measured parameters are compared with Finite Element Method (FEM) multi-physical electromechanical and RF simulations. The simulated phase shifts at both the operating bands fit well the measured value, despite the measured losses (S21) are larger than 5–7 dB if compared to simulations. However, such a non-ideality has a technological motivation that is explained in the paper and that will be fixed in the manufacturing of future devices.

Preparing of a high speed bistable electromagnetic RF MEMS switch

2007 ◽  
Vol 134 (2) ◽  
pp. 532-537 ◽  
Author(s):  
Yong-hua Zhang ◽  
Guifu Ding ◽  
Xiaofeng Shun ◽  
Donghua Gu ◽  
Bingchu Cai ◽  
...  
Keyword(s):  
High Speed ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch

A dual-SPDT RF-MEMS switch on a small-sized LTCC phase shifter for Ku-band operation

2009 ◽  
Author(s):  
Daisuke Yamane ◽  
Kiyotaka Yamashita ◽  
Harunobu Seita ◽  
Hiroyuki Fujita ◽  
Hiroshi Toshiyoshi ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Ku Band

RF-MEMS Switch and Phase Shifter Optimized for W-Band

2008 ◽  
Author(s):  
A. Stehle ◽  
G. Georgiev ◽  
V. Ziegler ◽  
B. Schoenlinner ◽  
U. Prechtel ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
W Band

3D Heterogeneous Integration using MEMS Devices for RF Applications

2012 ◽  
Vol 1427 ◽  
Author(s):  
Fumihiko Nakazawa ◽  
Xiaoyu Mi ◽  
Takeaki Shimanouchi ◽  
Tadashi Nakatani ◽  
Takashi Katsuki ◽  
...  
Keyword(s):  
Rf Mems ◽  
Acoustic Resonator ◽  
Tunable Filter ◽  
Wafer Surface ◽  
Heterogeneous Integration ◽  
Mems Devices ◽  
Mems Switches ◽  
Mems Switch ◽  
Film Bulk ◽  
Rf Applications

ABSTRACTThis paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

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