HgCdTe Detector Output Characteristics and Soft Damage Determination under Laser Irradiation

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance was evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses-irradiated NiOx/SiO2 TFT exhibited an enhanced mobility of 3 cm2/V-s from a value of 1.25 cm2/V-s for as-deposited NiOx/SiO2 TFT, subthreshold swing of 0.65 V/decade, on/off current ratio of 6.5 × 104 and threshold voltage of −12.2 V. The concentration of defect gap states as a result of light absorption processes explains the enhanced performance of laser-irradiated NiOx. Additionally, laser irradiation results in complex thermal and photo thermal changes, thus resulting in an enhanced electrical performance of the p-type NiOx/SiO2 TFT structure.

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Ｅlectrical response of PC-type HgCdTe detector under out-band 10.6 μm laser irradiation

High Power Laser and Particle Beams ◽

10.3788/hplpb20102212.2829 ◽

2010 ◽

Vol 22 (12) ◽

pp. 2829-2833

Author(s):

贺元兴 He Yuanxing ◽

江厚满 Jiang Houman

Keyword(s):

Laser Irradiation ◽

Electrical Response ◽

Hgcdte Detector

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Numerical analysis of the temperature field in HgCdTe detector by CW laser irradiation

High-Power Lasers and Applications IX ◽

10.1117/12.2501235 ◽

2018 ◽

Author(s):

Xuhui Weng ◽

Xiaodong Ren ◽

Wuhu Lei

Keyword(s):

Temperature Field ◽

Numerical Analysis ◽

Laser Irradiation ◽

Cw Laser ◽

Hgcdte Detector

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Chronic Laser Exposure Effects on Rabbit Retina

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100093523 ◽

1972 ◽

Vol 30 ◽

pp. 54-55

Author(s):

Burton B. Silver ◽

Theodore Lawwill

Keyword(s):

Laser Irradiation ◽

Laser Light ◽

Broad Band ◽

Argon Laser ◽

Atropine Sulfate ◽

Ultrastructural Changes ◽

Laser Exposure ◽

Rabbit Retina ◽

Histological Changes ◽

Threshold Doses

Dutch-belted 1 to 2.5 kg anesthetized rabbits were exposed to either xenon or argon laser light administered in a broad band, designed to cover large areas of the retina. For laser exposure, the pupil was dilated with atropine sulfate 1% and pheny lephrine 10%. All of the laser generated power was within a band centered at 5145.0 Anstroms. Established threshold for 4 hour exposures to laser irradiation are in the order of 25-35 microwatts/cm2. Animals examined for ultrastructural changes received 4 hour threshold doses. These animals exhibited ERG, opthalmascopic, and histological changes consistent with threshold damage.One month following exposure the rabbits were killed with pentobarbitol. The eyes were immediately enucleated and dissected while bathed in 3% phosphate buffered gluteraldehyde.

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A method to measure pores and fissures in geologic materials under S.E.M. by digital image processing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108209 ◽

1978 ◽

Vol 36 (1) ◽

pp. 212-213

Author(s):

L. Montoto ◽

M. Montoto ◽

A. Bel-Lan

Keyword(s):

Image Processing ◽

Optical Microscopy ◽

Digital Image Processing ◽

Digital Image ◽

Digital Processing ◽

Free Surfaces ◽

Geologic Materials ◽

Automatic Information ◽

Detector Output ◽

Rock Specimens

INTRODUCTION.- The physical properties of rock masses are greatly influenced by their internal discontinuities, like pores and fissures. So, these need to be measured as a basis for interpretation. To avoid the basic difficulties of measurement under optical microscopy and analogic image systems, the authors use S.E.M. and multiband digital image processing. In S.E.M., analog signal processing has been used to further image enhancement (1), but automatic information extraction can be achieved by simple digital processing of S.E.M. images (2). The use of multiband image would overcome difficulties such as artifacts introduced by the relative positions of sample and detector or the typicals encountered in optical microscopy.DIGITAL IMAGE PROCESSING.- The studied rock specimens were in the form of flat deformation-free surfaces observed under a Phillips SEM model 500. The SEM detector output signal was recorded in picture form in b&w negatives and digitized using a Perkin Elmer 1010 MP flat microdensitometer.

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Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170918 ◽

1994 ◽

Vol 52 ◽

pp. 636-637

Author(s):

S. Cao ◽

A. J. Pedraza ◽

L. F. Allard

Keyword(s):

Aluminum Nitride ◽

Laser Irradiation ◽

Electroless Deposition ◽

Thermal Evaporation ◽

Surface Region ◽

Near Surface ◽

Laser Patterning ◽

Electroless Copper ◽

Excimer Laser Irradiation ◽

Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

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