Thickness and Annealing Effects on the Thermoelectric Properties of P-type Bi0.5Sb1.5Te3Thin Films

Lead tin telluride based alloys are known p-type materials for thermoelectric applications, in the 50-600oC temperature range. These alloys combine desired features of mechanical and thermoelectric properties. The electronic transport properties of PbTe and Pb1-xSnxTe materials may be strongly dependent on the preparation technique. Powder metallurgy process is known to introduce defects and strains, that may alter carrier concentration. Under such non-equilibrium conditions the thermoelectric properties are instable at the operating temperature. An appropriate annealing treatment can eliminate this effect.. The present communication describes the annealing treatment applied to cold compacted and sintered Pb1-xSnxTe materials.

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Thermoelectric Properties of Undoped CoSb3

Materials Science Forum ◽

10.4028/www.scientific.net/msf.449-452.917 ◽

2004 ◽

Vol 449-452 ◽

pp. 917-920 ◽

Cited By ~ 14

Author(s):

Il Ho Kim ◽

G.S. Choi ◽

M.G. Han ◽

Ji Soon Kim ◽

Jung Il Lee ◽

...

Keyword(s):

Phase Transformation ◽

Phase Transitions ◽

Thermoelectric Properties ◽

Single Phase ◽

Arc Melting ◽

Annealing Effects ◽

P Type ◽

Type Conduction ◽

Semiconducting Behavior

CoSb3 compounds were prepared by the arc melting and their thermoelectric properties were investigated at 300K-600K. Annealing effects were examined and they were correlated to phase transformation and homogenization. Undoped CoSb3 showed p-type conduction and intrinsic semiconducting behavior at all temperatures examined. Thermoelectric properties were changed with constituent phases because α-CoSb2, β-CoSb and Sb are metallic or semimetallic phases while δ-CoSb3 is semiconducting phase. Thermoelectric properties were remarkably improved by annealing in vacuum and they were closely related to phase transitions. Single phase δ-CoSb3 was successfully obtained by annealing at 400°C for 24hrs.

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First-principles calculations to investigate mechanical, optoelectronic and thermoelectric properties of half-Heusler p-type semiconductor BaAgP

Results in Physics ◽

10.1016/j.rinp.2021.104068 ◽

2021 ◽

pp. 104068

Author(s):

F. Parvin ◽

M.A. Hossain ◽

I. Ahmed ◽

K. Akter ◽

A.K.M.A. Islam

Keyword(s):

Thermoelectric Properties ◽

First Principles ◽

First Principles Calculations ◽

Type Semiconductor ◽

P Type

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Enhancing thermoelectric properties of p-type CoSb3 skutterudite by Fe doping

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105721 ◽

2021 ◽

Vol 127 ◽

pp. 105721

Author(s):

Suchitra Yadav ◽

Sujeet Chaudhary ◽

Dinesh K. Pandya

Keyword(s):

Thermoelectric Properties ◽

Fe Doping ◽

P Type

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Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00425 ◽

2021 ◽

Author(s):

Dong Han ◽

Rahma Moalla ◽

Ignasi Fina ◽

Valentina M. Giordano ◽

Marc d’Esperonnat ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Epitaxial Strain ◽

P Type

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Optimization of the Thermoelectric Properties of p-Type Mg2–yLiyGe1–xSnx and Mg2–yLiyGe1–zSiz with x, z = 0.1 and 0.2

ACS Applied Energy Materials ◽

10.1021/acsaem.1c00172 ◽

2021 ◽

Author(s):

Vidushi Galwadu Arachchige ◽

Hasbuna Kamila ◽

Aryan Sankhla ◽

Léo Millerand ◽

Silvana Tumminello ◽

...

Keyword(s):

Thermoelectric Properties ◽

P Type

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Mechanosynthesis and Thermoelectric Properties of Fe, Zn, and Cd-Doped P-Type Tetrahedrite: Cu12-xMxSb4S13

Materials ◽

10.3390/ma14133448 ◽

2021 ◽

Vol 14 (13) ◽

pp. 3448

Author(s):

Francisco Arturo López Cota ◽

José Alonso Díaz-Guillén ◽

Oscar Juan Dura ◽

Marco Antonio López de la Torre ◽

Joelis Rodríguez-Hernández ◽

...

Keyword(s):

Thermoelectric Properties ◽

Figure Of Merit ◽

Powder Processing ◽

High Energy ◽

Secondary Phases ◽

Ambient Conditions ◽

Cadmium Sulfate ◽

Electrical Conductivities ◽

Compositional Changes ◽

P Type

This contribution deals with the mechanochemical synthesis, characterization, and thermoelectric properties of tetrahedrite-based materials, Cu12-xMxSb4S13 (M = Fe2+, Zn2+, Cd2+; x = 0, 1.5, 2). High-energy mechanical milling allows obtaining pristine and substituted tetrahedrites, after short milling under ambient conditions, of stoichiometric mixtures of the corresponding commercially available binary sulfides, i.e., Cu2S, CuS, Sb2S3, and MS (M = Fe2+, Zn2+, Cd2+). All the target materials but those containing Cd were obtained as single-phase products; some admixture of a hydrated cadmium sulfate was also identified by XRD as a by-product when synthesizing Cu10Cd2Sb4S13. The as-obtained products were thermally stable when firing in argon up to a temperature of 350–400 °C. Overall, the substitution of Cu(II) by Fe(II), Zn(II), or Cd(II) reduces tetrahedrites’ thermal and electrical conductivities but increases the Seebeck coefficient. Unfortunately, the values of the thermoelectric figure of merit obtained in this study are in general lower than those found in the literature for similar samples obtained by other powder processing methods; slight compositional changes, undetected secondary phases, and/or deficient sintering might account for some of these discrepancies.

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