Influence of Pulse Sputtering Power on the Structural and Optical Properties of SiCx Thin Films Containing Silicon Quantum Dots

2017 ◽  
Vol 46 (12) ◽  
pp. 1231002
Author(s):  
赵飞 ZHAO Fei ◽  
杨雯 YANG Wen ◽  
莫镜辉 MO Jing-hui ◽  
张志恒 ZHANG Zhi-heng ◽  
杨培志 YANG Pei-zhi
2009 ◽  
Vol 159-160 ◽  
pp. 74-76 ◽  
Author(s):  
Lucia V. Mercaldo ◽  
Paola Delli Veneri ◽  
Emilia Esposito ◽  
Ettore Massera ◽  
Iurie Usatii ◽  
...  

Optik ◽  
2018 ◽  
Vol 168 ◽  
pp. 853-863 ◽  
Author(s):  
Ateyyah M. Al-Baradi ◽  
M.M. El-Nahass ◽  
A.M. Hassanien ◽  
A.A. Atta ◽  
Mohammed S. Alqahtani ◽  
...  

2011 ◽  
Vol 4 (11) ◽  
pp. 3580-3584 ◽  
Author(s):  
Sudip Chakraborty ◽  
Ch. Rajesh ◽  
Shailaja Mahamuni ◽  
S. V. Ghaisas

2014 ◽  
Vol 979 ◽  
pp. 431-434 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

In this article, amorphous tantalum oxide thin films were deposited by dc reactive magnetron sputtering onto silicon (001) wafer and glass slide substrates. Sputtering power has been varied for optimizing thin film quality. The structural and optical properties of the Ta2O5 thin films were investigated by using X-ray diffraction, UV-Vis spectrophotometer and spectroscopic ellipsometry respectively. The XRD pattern result indicates that the films are amorphous. It was found that the growth rate was also increased with increasing dc power up to 250 W, and the maximum growth rate observed at 250 W was 0.25 nm/s. In addition, the refractive index and packing density of the films increases with increasing dc sputtering power.


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