Laser Fabrication and Performance of Periodic Microstructure on Polycrystalline Silicon Surface

This paper presents technology of multicrystalline silicon solar cells with laser texturisation step. The texturing of polycrystalline silicon surface using Nd:YAG laser makes it possible to increase absorption of the incident solar radiation. Moreover, the additional technological operation consisting in etching in 20 % KOH solution at temperature of 80°C was introduced into technology of the photovoltaic cells manufactured from laser textured wafers allows to remove laser induced defects but cause the texture to flatten out reducing it optical effectiveness. This paper demonstrates, that laser processing is very promising technique for texturing multicrystaline silicon independent on grains crystallographic orientation compared to conventional texturing methods in technology of solar cells.

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Integrated Diffractive Lenses for Ultrathin Silicon

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0099 ◽

2019 ◽

Author(s):

Marc van Veenhuizen ◽

Peter van der Cruijsen ◽

Keith A. Serrels ◽

Frank Zachariasse

Keyword(s):

Feasibility Study ◽

Integrated Circuit ◽

Silicon Surface ◽

Laser Scanning ◽

Fault Localization ◽

Numerical Aperture ◽

Laser Spot ◽

Lens Design ◽

Diffractive Lenses ◽

And Performance

Abstract High numerical aperture (NA) laser scanning for fault localization requires the use of special lenses aimed at creating a tightly focused laser spot within an integrated circuit. Typically, extrinsic solid immersion lenses are employed that optimize the refraction at the air-silicon surface. In this feasibility study we investigate with both simulations and experiments the use of integrated diffraction lenses for high-NA imaging. We take the limit to ultrathin silicon and discuss the implications for the lens design and performance.

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Large-Scale Laser Fabrication of Antifouling Silicon-Surface Nanosheet Arrays via Nanoplasmonic Ablative Self-Organization in Liquid CS2 Tracked by a Sulfur Dopant

ACS Applied Nano Materials ◽

10.1021/acsanm.8b00392 ◽

2018 ◽

Vol 1 (6) ◽

pp. 2461-2468 ◽

Cited By ~ 20

Author(s):

Sergey I. Kudryashov ◽

Luong V. Nguyen ◽

Demid A. Kirilenko ◽

Pavel N. Brunkov ◽

Andrey A. Rudenko ◽

...

Keyword(s):

Silicon Surface ◽

Large Scale ◽

Self Organization ◽

Laser Fabrication ◽

Nanosheet Arrays

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Investigation of Pre-Tungsten Silicide Deposition Wet Chemical Processing

MRS Proceedings ◽

10.1557/proc-386-75 ◽

1995 ◽

Vol 386 ◽

Author(s):

A. Philipossian ◽

M. Moinpour ◽

R. Wilkinson ◽

V. H. C. Watt

Keyword(s):

Contact Angle ◽

Polycrystalline Silicon ◽

Silicon Surface ◽

Morphological Characteristics ◽

Ambient Air ◽

Contact Angles ◽

Silicon Surfaces ◽

Native Oxide ◽

Initial Contact ◽

Air Exposure

ABSTRACTRemoving the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1% lightly-buffered HF solution results in the highest contact angle followed by the 1% buffered HF solution with surfactant, and the 1% HF solution. With respect to contact angle changes during ambient air exposure time, the asdeposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1% lightly-buffered HF solution results in the most stable surface followed by the 1% buffered HF solution with surfactant, and the 1% HF solution.

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