Sample Preparation Method of Scanning and Transmission Electron Microscope for the Appendages of Woodboring Beetle

10.3791/59251 ◽  
2020 ◽  
Author(s):  
Yan-Ru Zhang ◽  
Hai-Li Qiao ◽  
Li-Li Ren ◽  
Rong Wang ◽  
Peng-Fei Lu
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Transmission Electron Microscope ◽  
Preparation Method ◽  
Sample Preparation Method ◽  
Transmission Electron

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

scholarly journals A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Die Surface ◽  
Emission Microscopy ◽  
Focus Ion Beam

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.

TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis

2001 ◽  
Author(s):  
J.Y. Dai ◽  
S.F. Tee ◽  
C. L. Tay ◽  
S. Ansari ◽  
E. Er ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Preparation Method ◽  
Detailed Examination ◽  
Sample Preparation Method ◽  
Root Cause ◽  
Transmission Electron ◽  
Scanning Electron Microcopy ◽  
Failure Site ◽  
Scanning Electron

Abstract In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.

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