TEM Examination of a Specified Site Identified by X-SEM in Microelectronics Failure Analysis
Keyword(s):
Abstract In semiconductor failure analysis, there is a demand that after mechanical polishing and scanning electron microcopy (SEM) examination, the failure site needs to be analyzed by transmission electron microscope (TEM) for a detailed examination to find the root cause. In this paper, a fast and practical TEM sample preparation method for TEM examination of specific site identified by cross-section scanning electron microscope (SEM) is demonstrated for further structural analysis.
1969 ◽
Vol 27
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pp. 12-13
1971 ◽
Vol 29
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pp. 26-27
1970 ◽
Vol 28
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pp. 386-387
1971 ◽
Vol 29
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pp. 452-453
1969 ◽
Vol 27
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pp. 38-39
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1972 ◽
Vol 30
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pp. 482-483