scholarly journals A vicinal surface model for epitaxial growth with logarithmic free energy

2018 ◽  
Vol 23 (10) ◽  
pp. 4433-4453
Author(s):  
Yuan Gao ◽  
◽  
Hangjie Ji ◽  
Jian-Guo Liu ◽  
Thomas P. Witelski ◽  
...  
Keyword(s):  
Free Energy ◽  
Epitaxial Growth ◽  
Surface Model ◽  
Vicinal Surface

Epitaxial growth of Co2MnSi thin films at the vicinal surface of n-Ge(111) substrate

2010 ◽  
Vol 96 (14) ◽  
pp. 142501 ◽  
Author(s):  
M. A. I. Nahid ◽  
M. Oogane ◽  
H. Naganuma ◽  
Y. Ando
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Vicinal Surface

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling

2019 ◽  
Vol 963 ◽  
pp. 136-140 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Shi Yang Ji ◽  
Ryoji Kosugi ◽  
Yoshiyuki Yonezawa ◽  
Hajime Okumura
Keyword(s):  
Free Energy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Surface Free Energy ◽  
Diffusion Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thomson Effect ◽  
Effective Surface

Trench-filling epitaxial growth of 4H-SiC by chemical vapor deposition (CVD) with and without HCl was analyzed based on a continuum-diffusion model including the Gibbs–Thomson effect. Qualitative reproduction of the reported observation showed that the effective surface free energy of SiC during CVD can be doubled by the addition of HCl

scholarly journals Kinetic Monte Carlo simulation of the epitaxial growth mechanism on the vicinal surface

2006 ◽  
Vol 55 (10) ◽  
pp. 5435
Author(s):  
Mao Hui-Bing ◽  
Jing Wei-Ping ◽  
Yu Jian-Guo ◽  
Wang Ji-Qing ◽  
Wang Li ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Kinetic Monte Carlo ◽  
Vicinal Surface ◽  
Kinetic Monte Carlo Simulation

Multispecies epitaxial growth on vicinal surfaces with chemical reactions and diffusion

2005 ◽  
Vol 461 (2063) ◽  
pp. 3483-3504 ◽  
Author(s):  
Paolo Cermelli ◽  
Michel Jabbour
Keyword(s):  
Free Energy ◽  
Epitaxial Growth ◽  
Chemical Reactions ◽  
Evolution Equations ◽  
Constitutive Relations ◽  
Local Equilibrium ◽  
Free Energy Density ◽  
Force Balance ◽  
Rate Coefficients ◽  
Vapour Phase Epitaxy

We derive, in the form of coupled partial differential equations, the evolution equations for the epitaxial growth, via step flow, of a multispecies crystal on a stepped surface. Both adsorption–desorption on the terraces and attachment–detachment along the step edges are accompanied by chemical reactions and adatom diffusion. Moreover, we account for deposition from either a vacuum, e.g., in molecular beam epitaxy, or a gas, e.g., during vapour phase epitaxy (chemical or physical). Our theory (i) endows the steps with a thermodynamic structure whose main ingredients are a free-energy density and species edge chemical potentials, (ii) incorporates anisotropy into the terrace species diffusion as well as into the edge free energy, species mobilities, attachment–detachment and reaction-rate coefficients, (iii) allows for large departures from local equilibrium along the steps, and (iv) ensures the consistency of the constitutive relations for the terrace and edge chemical rates with the second law. In particular, a configurational force balance at each step yields a generalization of the classical Gibbs–Thomson relation. Finally, the special case of steady-state growth of a binary compound is discussed.

PHENOMENOLOGICAL VIEW OF NUCLEATION AND GROWTH OF Si ON THE Si(111)-(7×7) SUPERLATTICE

2000 ◽  
Vol 07 (01n02) ◽  
pp. 61-66 ◽  
Author(s):  
YUKICHI SHIGETA
Keyword(s):  
Activation Energy ◽  
Free Energy ◽  
Surface Structure ◽  
Epitaxial Growth ◽  
Size Distribution ◽  
Nucleation And Growth ◽  
Island Growth ◽  
Rearrangement Process ◽  
Phenomenological Consideration ◽  
The Difference

The influence of surface structure on epitaxial growth, which has not been considered before in the crystal growth theory, is discussed for the case of epitaxial growth of Si on Si(111)-(7×7) substrate. Since the rearrangement of surface structure is essential for progressing the epitaxial growth, the activation energy for the rearrangement is considered into the free energy change in the nucleation and growth processes. From a phenomenological consideration, some features of island shape and size distribution, which had been observed, are clearly explained. The size distribution is discontinuous according to the size of the unit cell of the superlattice and the shape will be almost triangular. These features are caused by prevention of the lateral growth at the faulted half in the 7×7 structure. After the evaporation has been stopped, the detachment of atoms from corners of the triangular island starts and the island shows a rounded shape. The detachment after the deposition is also explained by the difference in the free energy changes between during and after deposition. It is suggested that the activation energy for the rearrangement process of the 7×7 structure with island growth is much higher than that for the formation process with thermal decay of the Si island.

Photoluminescence Studies of a Quantum Well Modulated by Faceting on Gaas (110) Surfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
S. Tomiya ◽  
C. M. Reaves ◽  
M. Krishnamurthy ◽  
M. Wassermeier ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Interface Roughness ◽  
Vicinal Surface ◽  
Temperature Dependent ◽  
Molecular Beam Epitaxial ◽  
Photoluminescence Studies ◽  
Molecular Beam Epitaxial Growth

AbstractStep bunching during epitaxial growth results in the transformation of a vicinal surface into a periodic array of micro-facets. Molecular beam epitaxial growth on the vicinal GaAs (110) surface exhibits this phenomenon which has primarily been characterized by electron microscopy. GaAs quantum wells with AlAs barriers were grown on GaAs(110) substrates vicinal 0.5-2· towards [010]. The faceting on the vicinal surface creates two distinct quantum well thicknesses. While most of the quantum well is 96Å thick, it broadens at the faceted regions. This thickness modulation produces two distinct luminescence peaks. By using temperature dependent photoluminescence, we have observed trends in exciton mobility. The exciton mobility decreases at low temperatures for the 1.0° and 2.0° samples, indicating a scattering mechanism. We will discuss interface roughness and other sources of scattering.

Sign in / Sign up

Export Citation Format

Share Document