Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO

2008 ◽  
Vol 53 (1) ◽  
pp. 88-93 ◽  
Author(s):  
Rüdiger Schmidt-Grund ◽  
Bernd Rheinländer ◽  
Evgeni M. Kaidashev ◽  
Michael Lorenz ◽  
Marius Grundmann ◽  
...  
1984 ◽  
Vol 126 (2) ◽  
pp. K149-K154 ◽  
Author(s):  
H. Boudriot ◽  
R. Gründler ◽  
K. Deus ◽  
T. Stöckert ◽  
H. A. Schneider

2001 ◽  
Vol 693 ◽  
Author(s):  
N.V. Edwards ◽  
O.P.A. Lindquist ◽  
L.D. Madsen ◽  
S. Zollner ◽  
K. Järrehdahl ◽  
...  

AbstractAs a first step toward enabling the in-line metrology of III-V nitride heterostructure and materials, we present the optical constants of the two common substrate materials over an unprecendented spectral range. Vacuum Ultraviolet spectroscopic ellipsometry (VUVSE) was used to obtain the optical constants for Al2O3 and the ordinary and extra-ordinary component of the dielectric function for both 4H- and 6H-SiC. The results are discussed in the context of anisotropy, polytypism, bandstructure, optical transitions, and preparation/characterization of abrupt surfaces, where appropriate.


2008 ◽  
Vol 8 (12) ◽  
pp. 6584-6588 ◽  
Author(s):  
R. Márquez-Islas ◽  
B. Flores-Desirena ◽  
F. Pérez-Rodríguez

We investigate theoretically the coupling of exciton with light in a one-dimensional photonic crystal. The unit cell of the crystal consists of two alternating layers, namely a metallic layer and a semiconductor one. The frequency-dependent dielectric function of the metal is described by the Drude model, whereas for the semiconductor we use a nonlocal excitonic dielectric function. The polariton dispersion for s-polarized modes in the metal-semiconductor photonic crystal is compared with that for a dielectric-semiconductor photonic crystal. Because of the metal layers, a low-frequency gap appears in the photonic band structure. The presence of the semiconductor gives rise to photonic bands associated with the coupling of light with size-quantized excitón states. At frequencies above the longitudinal exciton frequency, the photonic band structure exhibits anticrossing phenomena produced by the upper exciton–polariton mode and size-quantized excitons. It is found that the anticrossing phenomena in the metal-semiconductor photonic crystal occur at higher frequencies in comparison with the dielectric-semiconductor case.


2006 ◽  
Vol 203 (11) ◽  
pp. 2841-2844 ◽  
Author(s):  
K. Wakita ◽  
Y. Shim ◽  
G. Orudzhev ◽  
N. Mamedov ◽  
F. Hashimzade

2012 ◽  
Vol 60 (8) ◽  
pp. 1219-1223
Author(s):  
Tae Jung Kim ◽  
Tae Ho Ghong ◽  
Jae Jin Yoon ◽  
Soon Yong Hwang ◽  
Nilesh Barange ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yang-Yang Lv ◽  
Jinlong Xu ◽  
Shuang Han ◽  
Chi Zhang ◽  
Yadong Han ◽  
...  

AbstractAs a quantum material, Weyl semimetal has a series of electronic-band-structure features, including Weyl points with left and right chirality and corresponding Berry curvature, which have been observed in experiments. These band-structure features also lead to some unique nonlinear properties, especially high-order harmonic generation (HHG) due to the dynamic process of electrons under strong laser excitation, which has remained unexplored previously. Herein, we obtain effective HHG in type-II Weyl semimetal β-WP2 crystals, where both odd and even orders are observed, with spectra extending into the vacuum ultraviolet region (190 nm, 10th order), even under fairly low femtosecond laser intensity. In-depth studies have interpreted that odd-order harmonics come from the Bloch electron oscillation, while even orders are attributed to Bloch oscillations under the “spike-like” Berry curvature at Weyl points. With crystallographic orientation-dependent HHG spectra, we further quantitatively retrieved the electronic band structure and Berry curvature of β-WP2. These findings may open the door for exploiting metallic/semimetallic states as solid platforms for deep ultraviolet radiation and offer an all-optical and pragmatic solution to characterize the complicated multiband electronic structure and Berry curvature of quantum topological materials.


2019 ◽  
Vol 33 (22) ◽  
pp. 1950247 ◽  
Author(s):  
Besbes Anissa ◽  
Djelti Radouan ◽  
Bestani Benaouda

Structural, electronic, optical and thermoelectric response of the cubic RhTiSb compound is reported using TB-mBJ potential. The calculated results for the band structure and DOS confirm that the RhTiSb is a nonmagnetic (NM) semiconductor with an indirect bandgap of 0.71 eV. The main optical parameters such as dielectric function, absorption coefficient, refractive index and optical reflectivity were estimated for emission upto 14 eV. The RhTiSb half-Heusler exhibits a maximum absorption in the visible and ultraviolet region. By using the Boltzmann transport equations as incorporated in BoltzTraP code, the thermoelectric characteristics were calculated. The main properties which describe the aptitude of material in thermoelectric environment such as Seebeck coefficient and figure of merit were calculated. The high values of figure-of-merit (ZT [Formula: see text] 0.7) were observed in large range of temperature indicating that RhTiSb have a good thermoelectric performance.


2019 ◽  
Vol 114 (6) ◽  
pp. 062102 ◽  
Author(s):  
Rigo A. Carrasco ◽  
Stefan Zollner ◽  
Stephanie A. Chastang ◽  
Jinsong Duan ◽  
Gordon J. Grzybowski ◽  
...  

2013 ◽  
Vol 113 (7) ◽  
pp. 073503 ◽  
Author(s):  
T. Böntgen ◽  
K. Brachwitz ◽  
R. Schmidt-Grund ◽  
M. Lorenz ◽  
M. Grundmann

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