scholarly journals Charge carrier transport and recombination in disordered materials

2016 ◽  
Vol 56 (3) ◽  
pp. 182-189 ◽  
Author(s):  
Gytis Juška ◽  
Kęstutis Arlauskas ◽  
Kristijonas Genevičius
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Mobility ◽  
Thin Layers ◽  
Charge Carriers ◽  
Disordered Materials ◽  
Charge Carrier Transport ◽  
Bulk Heterojunctions ◽  
The Impact

In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport

Charge Carrier Transport along Grain Boundaries in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 293-298 ◽  
Author(s):  
Martin Kittler ◽  
Manfred Reiche ◽  
Hans Michael Krause
Keyword(s):  
Charge Carrier ◽  
Grain Boundaries ◽  
Carrier Transport ◽  
Room Temperature ◽  
Drain Current ◽  
Charge Carriers ◽  
Strong Increase ◽  
Charge Carrier Transport ◽  
Mobility Of Charge Carriers

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

scholarly journals Crystal facet engineering induced anisotropic transport of charge carriers in a perovskite

2018 ◽  
Vol 6 (43) ◽  
pp. 11707-11713 ◽  
Author(s):  
Hewei Yang ◽  
Yunzhan Zhou ◽  
Yijun Yang ◽  
Ding Yi ◽  
Tao Ye ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Crystal Facet ◽  
Precise Control ◽  
Crystal Orientations ◽  
Perovskite Crystal ◽  
Anisotropic Transport ◽  
Optoelectronic Applications

Precise control of crystal orientations and macroscopic morphology of a perovskite crystal is crucial for various optoelectronic applications relying on charge carrier transport tuning along exposed crystal facets.

The Impact of the Dielectric/Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

2019 ◽  
Vol 13 (2) ◽  
pp. 113-122 ◽  
Author(s):  
Youngsuk Jung ◽  
R. Joseph Kline ◽  
Eric K. Lin ◽  
Daniel A. Fischer ◽  
Michael F. Toney ◽  
...  
Keyword(s):  
Charge Carrier ◽  
High Performance ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Semiconductor Interface ◽  
The Impact

Charge carrier transport in a-Si:H/c-Si heterojunctions

2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Excess Charge ◽  
Si Substrate ◽  
Transient Photoconductivity

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

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