Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

2007 ◽  
pp. 881-884
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Fabrication And Characterization

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

2020 ◽  
Vol 29 (4) ◽  
pp. 047305
Author(s):  
Wei-Fan Wang ◽  
Jian-Feng Wang ◽  
Yu-Min Zhang ◽  
Teng-Kun Li ◽  
Rui Xiong ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Fabrication And Characterization

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

2007 ◽  
Vol 556-557 ◽  
pp. 881-884 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Device Simulation ◽  
Schottky Barrier Diodes ◽  
World Record ◽  
Device Structure ◽  
The World ◽  
Fabrication And Characterization

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.

scholarly journals Fabrication and characterization of Schottky barrier diodes on rutile TiO2

2020 ◽  
Vol 7 (6) ◽  
pp. 065903
Author(s):  
Julie Bonkerud ◽  
Christian Zimmermann ◽  
Philip Michael Weiser ◽  
Thomas Aarholt ◽  
Espen Førdestrøm Verhoeven ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Rutile Tio2 ◽  
Fabrication And Characterization

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 941-944 ◽  
Author(s):  
M. Furno ◽  
F. Bonani ◽  
G. Ghione ◽  
Sergio Ferrero ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Experimental Study ◽  
Numerical Simulations ◽  
Schottky Barrier ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes ◽  
Electrical Measurements ◽  
Process Technology ◽  
Edge Termination ◽  
Fabrication And Characterization

We present a theoretical and experimental study on the design, fabrication and characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers. Numerical simulations were performed with a commercial tool on different edge termination structures, with the aim of optimizing the device behavior. For each termination design, SBD were fabricated and characterized by means of electrical measurements vs. temperature. Simulations provided also useful data for the assessment of the device process technology.

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