Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)
2007 ◽
Vol 556-557
◽
pp. 881-884
◽
Keyword(s):
The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.
2019 ◽
Vol 30
(14)
◽
pp. 13280-13289
2009 ◽
Vol 615-617
◽
pp. 963-966
◽
2005 ◽
pp. 941-944
2007 ◽
pp. 881-884
2006 ◽
Vol 527-529
◽
pp. 1175-1178
◽
2018 ◽
Vol 47
(5)
◽
pp. 3037-3044
◽
Keyword(s):