Characterization of Anisotropic and Irregularly-Shaped Materials by High-Sensitive Thermal Conductivity Measurements

2007 ◽  
pp. 1641-1644
Author(s):  
M. Gustavsson ◽  
Hideaki Nagai ◽  
Takeshi Okutani
Keyword(s):  
Thermal Conductivity ◽  
Conductivity Measurements

Anisotropic Thermal Conductivity of a Si/Ge Quantum Dot Superlattice

2000 ◽  
Author(s):  
Theodorian Borca-Tasciuc ◽  
Weili Liu ◽  
Jianlin Liu ◽  
Kang L. Wang ◽  
Gang Chen
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Conductivity Measurements ◽  
Transport Models ◽  
3Ω Method ◽  
Superlattice Structure ◽  
Anisotropic Thermal Conductivity ◽  
Ge Quantum Dot

Abstract In this work, we present experimental results on the in-plane and cross-plane thermal conductivity characterization of a Si/Ge quantum-dots superlattice structure. The quantum-dots superlattice was grown by molecular-beam-epitaxy and self-organization. The anisotropic thermal conductivity measurements are performed by a differential two-wire 3ω method. The measured in-plane and cross-plane thermal conductivity values show a different temperature behavior. The results are compared and explained with heat transport models in superlattices.

scholarly journals Thermal conductivity measurements via time-domain thermoreflectance for the characterization of radiation induced damage

2015 ◽  
Vol 30 (9) ◽  
pp. 1403-1412 ◽  
Author(s):  
Ramez Cheaito ◽  
Caroline S. Gorham ◽  
Amit Misra ◽  
Khalid Hattar ◽  
Patrick E. Hopkins
Keyword(s):  
Thermal Conductivity ◽  
Time Domain ◽  
Conductivity Measurements ◽  
Radiation Induced ◽  
Image Position

Abstract

Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

Characterization of New Ionically Conducting Peo-Based Networks by Diffusion, Elasticity Modulus and Ionic Conductivity Measurements

1992 ◽  
Vol 293 ◽  
Author(s):  
Herve Cheradame ◽  
F. Desbat ◽  
P. Mercier-Niddam ◽  
S. Boileau
Keyword(s):  
Diffusion Coefficient ◽  
Ionic Conductivity ◽  
Elasticity Modulus ◽  
Sol Gel ◽  
Cation Transport ◽  
Lithium Cation ◽  
Conductivity Measurements ◽  
Conducting Materials ◽  
Diffusion Studies

AbstractIonically conducting materials containing PEO were prepared from telechelic di(methyl-diethoxy-silane) PEO, synthesized by the hydrosilylation of telechelic diallyl-PEO with methyldiethoxysilane. The network is obtained by the usual sol-gel chemistry. Then, it is filled with LiClO4 by diffusion of the salt and further drying. A comparison is made with the same kind of materials crosslinked using urethane chemistry. Diffusion studies show that the diffusion coefficient of solvent is similar for both types of materials, whilst the ionic conductivity is higher for the networks crosslinked with siloxane bonds. An experiment of diffusion of LiClO4 without solvent showed that this salt has a diffusion coefficient of the order of 2.10-8 cm2.sec-1 at 34°C. The conductivity calculated from this determination is compatible with the mechanism of lithium cation transport by the diffusion of salt molecules. Elasticity modulus measurements show that the salt aggregates are essentially located within the crosslinks at low concentration, but also in the PEO chains for salt concentrations higher than 1 mol/l.

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