Characterization of Interconnect Defects Using Scanning Thermal Conductivity Microscopy

2004 ◽  
Author(s):  
H.W. Ho ◽  
J.C.H. Phang ◽  
A. Altes ◽  
L.J. Balk
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale

Abstract In this paper, scanning thermal conductivity microscopy is used to characterize interconnect defects due to electromigration. Similar features are observed both in the temperature and thermal conductivity micrographs. The key advantage of the thermal conductivity mode is that specimen bias is not required. This is an important advantage for the characterization of defects in large scale integrated circuits. The thermal conductivity micrographs of extrusion, exposed and subsurface voids are presented and compared with the corresponding topography and temperature micrographs.

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

Effective Thermal Conductivity of Six Sigma’s Copper Reinforced Column Grid Array Interconnect for Ceramic Microelectronic Packages

2010 ◽  
Author(s):  
Mark Eblen
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Effective Thermal Conductivity ◽  
Flip Chip ◽  
Heat Removal ◽  
Thermal Design ◽  
Printed Wiring Board ◽  
Wiring Board ◽  
High Lead

Thermal management of flip chip style integrated circuits often relies on thermal conduction through the ceramic package and high lead solder grid array leads into the printed wiring board as the primary path for heat removal. Thermal analysis of this package configuration requires accurate characterization of the sometimes geometrically complex package-to-board interface. Given the unique structure of the Six Sigma column grid array (CGA) interconnect, a detailed finite element submodel was used to numerically derive the effective thermal conductivity with comparisons to a conventional CGA interconnect. Once an effective thermal conductivity value is obtained, the entire interconnect layer can be represented as a fictitious cuboid layer for inclusion in a more traditional “closed-form” thermal resistance calculation. This method allows the package designer a quick and robust method to evaluate initial thermal design study tradeoffs.

Large-Scale Molecular Dynamics Modeling of a-SiO2

2012 ◽  
Vol 602-604 ◽  
pp. 751-754
Author(s):  
Ning Bo Liao
Keyword(s):  
Integrated Circuits ◽  
Silicon Dioxide ◽  
Large Scale ◽  
Distribution Functions ◽  
Dynamics Modeling ◽  
Fracture Properties ◽  
Molecular Dynamics Modeling ◽  
Scale Characterization ◽  
Pair Distribution Functions

Silicon dioxide plays an important role in integrated circuits and microelectronics. However, the experiments have limitations in micro/nano-scale characterization of fracture properties at high temperatures. In this paper, the structural and fracture properties of amorphous silicon dioxide (a-SiO2) were studied at temperatures up to 1500K. The simulation results consist with the experiments on pair distribution functions, structure factor and angular distributions.

Research and Prospect of Diamond/Aluminum Matrix Composites

2021 ◽  
Vol 871 ◽  
pp. 211-215
Author(s):  
Hao Wu ◽  
Sen Yang
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Large Scale ◽  
Heat Dissipation ◽  
Aluminum Matrix ◽  
Matrix Alloy ◽  
Aluminum Matrix Composite ◽  
Aluminum Matrix Composites ◽  
Matrix Composites ◽  
Interface Bonding

Diamond/aluminum matrix composite with high thermal conductivity is of great significance to solve the heat dissipation problem of large-scale integrated circuits and high-power components. This paper reviews the current research status of diamond/aluminum matrix composites, and analyzes the effects of the preparation and processing of the composites, the interface bonding between diamond and aluminum matrix, the reinforced diamond and matrix alloy elements on the properties of the composites.

Microscale sensors based on silicon carbide and silicon

2008 ◽  
Vol 222 (1) ◽  
pp. 19-26 ◽  
Author(s):  
R Cheung ◽  
P Argyrakis
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Large Scale ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Biologically Inspired ◽  
Out Of Plane ◽  
Circuits Vlsi ◽  
Silicon Based

The current paper consists of two topics related to microelectromechanical systems (MEMS). The first topic reviews recent advances made in the area of silicon carbide (SiC) MEMS for applications in harsh environments. Given the unique properties of SiC, the potential and progress in the development and deployment of the harsh environment material for the fabrication and characterization of resonators and pressure sensors are described. The second topic details the motivation behind the study of biologically inspired systems and how silicon-based microscale sensors with out-of-plane structures could be integrated with analogue very-large-scale integrated circuits (VLSI) for insect-inspired robotic studies.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Characterization of seawater reverse osmosis fouled membranes from large scale commercial desalination plant

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Reverse Osmosis ◽  
Large Scale ◽  
Retention Rate ◽  
Local Level ◽  
Microscopic Analysis ◽  
Transmembrane Pressure ◽  
Hydraulic Permeability ◽  
Seawater Reverse Osmosis ◽  
A Chain

The objective of this work is to study the ageing state of a used reverse osmosis (RO) membrane taken in Algeria from the Benisaf Water Company seawater desalination unit. The study consists of an autopsy procedure used to perform a chain of analyses on a membrane sheet. Wear of the membrane is characterized by a degradation of its performance due to a significant increase in hydraulic permeability (25%) and pressure drop as well as a decrease in salt retention (10% to 30%). In most cases the effects of ageing are little or poorly known at the local level and global measurements such as (flux, transmembrane pressure, permeate flow, retention rate, etc.) do not allow characterization. Therefore, a used RO (reverse osmosis) membrane was selected at the site to perform the membrane autopsy tests. These tests make it possible to analyze and identify the cause as well as to understand the links between performance degradation observed at the macroscopic scale and at the scale at which ageing takes place. External and internal visual observations allow seeing the state of degradation. Microscopic analysis of the used membranes surface shows the importance of fouling. In addition, quantification and identification analyses determine a high fouling rate in the used membrane whose foulants is of inorganic and organic nature. Moreover, the analyses proved the presence of a biofilm composed of protein.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

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