A Model of Transinet Response of Semiconductor GAS Sensor Considering Temperature Dependency of Carrer Mobility

A model of transient response of semiconductor gas sensor was improved by considering temperature dependency of carrier mobility in SnO2 gas sensor. The model is useful for analysis of transient response of the sensor. Improvements of accuracy of the model have been desired to express the difference of the calculated sensor outputs between the kinds of gases for classifying the kind of gases. The model which considers the temperature dependency of carrier mobility has been newly constructed. The sensor output calculated by new model was a close result by the experiment. Gas classification will be realized by using the model together with activation energy dependence of the sensor output.

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ChemInform Abstract: Selective CO Detection by Using Indium Oxide-Based Semiconductor Gas Sensor.

ChemInform ◽

10.1002/chin.199626010 ◽

2010 ◽

Vol 27 (26) ◽

pp. no-no

Author(s):

H. YAMAURA ◽

J. TAMAKI ◽

K. MORIYA ◽

N. MIURA ◽

N. YAMAZOE

Keyword(s):

Gas Sensor ◽

Indium Oxide ◽

Semiconductor Gas Sensor ◽

Co Detection

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Decoration of CuO NWs Gas Sensor with ZnO NPs for Improving NO2 Sensing Characteristics

Sensors ◽

10.3390/s21062103 ◽

2021 ◽

Vol 21 (6) ◽

pp. 2103 ◽

Cited By ~ 1

Author(s):

Tae-Hee Han ◽

So-Young Bak ◽

Sangwoo Kim ◽

Se Hyeong Lee ◽

Ye-Ji Han ◽

...

Keyword(s):

Gas Sensor ◽

Gas Sensors ◽

Sol Gel ◽

Oxide Semiconductor ◽

Zno Nps ◽

X Ray ◽

Semiconductor Gas Sensor ◽

Initial Resistance ◽

P Type ◽

Sensing Characteristics

This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.

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