scholarly journals Magnetic and Electrical Properties of Undoped and Holmium Doped ZnO Thin Films Grown by Sol-Gel Method

2013 ◽  
Vol 8-9 ◽  
pp. 301-308 ◽  
Author(s):  
Mihaela Popa ◽  
Guy Schmerber ◽  
Dana Toloman ◽  
Mihai S. Gabor ◽  
Amalia Mesaros ◽  
...  

Undoped and holmium-doped ZnO thin films were obtained, using the sol-gel method. The films were characterized by scanning electron microscopy (SEM), Hall effect measurements, electron paramagnetic resonance (EPR) spectroscopy and superconducting quantum interference device vibrating sample magnetometry (SQUID-VSM). The Hall effect measurements have indicated a n-type conduction with a resistivity of about 3.2 Ω.cm for the undoped ZnO and of about 4.5 Ω.cm for the 5 at. % Ho-doped ZnO thin films. The EPR measurements have indicated the presence of interstitial zinc in the undoped ZnO and the presence of zinc vacancies in 5 at. % Ho-doped ZnO. Ho (5 at. %)-doped ZnO films exhibit superparamagnetism at 5 K, while a low paramagnetic behavior was observed at room temperature.

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.


2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2000 ◽  
Vol 181-182 ◽  
pp. 109-112 ◽  
Author(s):  
Shinobu Fujihara ◽  
Chikako Sasaki ◽  
Toshio Kimura

2004 ◽  
Vol 180-181 ◽  
pp. 659-662 ◽  
Author(s):  
V Musat ◽  
B Teixeira ◽  
E Fortunato ◽  
R.C.C Monteiro ◽  
P Vilarinho

2012 ◽  
Vol 258 (20) ◽  
pp. 8192-8198 ◽  
Author(s):  
P. Jongnavakit ◽  
P. Amornpitoksuk ◽  
S. Suwanboon ◽  
N. Ndiege

2010 ◽  
Vol 152-153 ◽  
pp. 868-873 ◽  
Author(s):  
Xiu Ling Lv ◽  
Yu Bo Dou ◽  
Juan Wang ◽  
Ying Xu

Al doped ZnO thin films(AZO films) was prepared by sol-gel method. The influence of Parameters of different processes on the crystallization properties, micro-morphology and optical properties of this kind of films were studied, using by X-ray diffractometer, filed emission stereoscan, spectral photometer, hall admeasuring apparatus. The results indicated that the crystallization properties, micro-morphology and optical properties of Al doped ZnO films were best on the condition that the sol density was 0.5mol/L, hat treatment temperature is 600 and there is a 8-layer coating.


Silicon ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2577-2584 ◽  
Author(s):  
M. Medjaldi ◽  
O. Touil ◽  
B. Boudine ◽  
M. Zaabat ◽  
O. Halimi ◽  
...  

2014 ◽  
Vol 49 (14) ◽  
pp. 4722-4734 ◽  
Author(s):  
Dongyun Guo ◽  
Kuninori Sato ◽  
Shingo Hibino ◽  
Tetsuya Takeuchi ◽  
Hisami Bessho ◽  
...  

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