The Variations of Cu/Ga Ratio on the Structural and Optical Properties of Cu(In, Ga)Se2 Thin Films by Co-Evaporation Technology

2011 ◽  
Vol 110-116 ◽  
pp. 1187-1190
Author(s):  
Hung Ing Chen ◽  
Jen Cheng Wang ◽  
Chia Hui Fang ◽  
Yu Ting Liang ◽  
Tung Po Hsieh ◽  
...  

The result of an extensive research on this material is the achievement of approaching 20% efficiency by the co-evaporation of copper, indium, gallium and selenium elements. Recently, photoluminescence (PL) spectra have been studied on Cu (In,Ga) Se2(CIGS) thin films and CIGS solar cells, to clarify the carrier recombination process. The CIGS layers were grown on the Mo-coated soda-lime glass substrate by the three stage process and four sources co-evaporation of constituent elements onto a heated substrate. It has found that the structural and optical properties of the CIGS thin film was influenced by the Cu/Ga ratio (RCu/Ga) of the CIGS thin film compositional variation. The X-ray diffraction and PL spectra were used to characterize the structure property and carrier recombination mechanism of CIGS thin film.

2005 ◽  
Vol 891 ◽  
Author(s):  
Kousik Samanta ◽  
Pijush Bhattacharya ◽  
Ram S. Katiyar ◽  
W. Iwamoto ◽  
R. R. Urbano ◽  
...  

ABSTRACTThin films of Co substituted ZnO and ZnCo2O4 were deposited on c-axis (0001) oriented Al2O3 substrates using pulsed laser deposition. The XRD results showed all the films were highly (002) oriented with a less intense peak of (311) for ZnCo2O4 thin film. Micro-Raman spectra of ceramic targets showed the modes related to wurtzite ZnO and spinel ZnCo2O4 structures. In thin films of Zn1−xCoxO no modes corresponding to ZnCo2O4 were detected. The intensity of E1(LO) and multiphonon peak at 584 and 540 cm−1 respectively, increased with increase in Co substitution. The optical absorption of the films showed that the band gap decreased with increase of Co concentrations at room temperature along with the sub-bandgap absorptions due to d-d transitions of Co2+. Similar sub-bandgap d-d transition was also observed in the absorption spectra ZnCo2O4 thin films. The highest saturated magnetization (0.2μB/Co) was obtained for 5%Co substituted ZnO.


2017 ◽  
Vol 07 (04) ◽  
pp. 1750024 ◽  
Author(s):  
Stephen Lourduraj ◽  
Rayar Victor Williams

Thin films of iron (Fe)-doped titanium dioxide (Fe:TiO[Formula: see text] were prepared by sol–gel spin coating technique and further calcined at 450[Formula: see text]C. The structural and optical properties of Fe-doped TiO2 thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet–visible spectroscopy (UV–vis) and atomic force microscopic (AFM) techniques. The XRD results confirm the nanostructured TiO2 thin films having crystalline nature with anatase phase. The characterization results show that the calcined thin films having high crystallinity and the effect of iron substitution lead to decreased crystallinity. The SEM investigations of Fe-doped TiO2 films also gave evidence that the films were continuous spherical shaped particles with a nanometric range of grain size and film was porous in nature. AFM analysis establishes that the uniformity of the TiO2 thin film with average roughness values. The optical measurements show that the films having high transparency in the visible region and the optical band gap energy of Fe-doped TiO2 film with iron (Fe) decrease with increase in iron content. These important requirements for the Fe:TiO2 films are to be used as window layers in solar cells.


Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 766
Author(s):  
Muhammad Shahriar Bashar ◽  
Yulisa Yusoff ◽  
Siti Fazlili Abdullah ◽  
Mashudur Rahaman ◽  
Puvaneswaran Chelvanathan ◽  
...  

In this paper, Zn1−xMgxS thin films were co-sputtered on glass substrates using ZnS and MgS binary target materials under various applied RF power. The compositional ratio of Zn1−xMgxS films was varied by changing the RF power at an elevated temperature of 200 °C. The structural and optical properties were studied in detail. The structural analysis shows that the co-sputtered Zn1−xMgxS thin films have a cubic phase with preferred orientation along the (111) plane. The lattice constant and ionicity suggest the presence of a zincblende structure in Zn1−xMgxS thin films. Zn1−xMgxS thin films have transmittance over 76%. The extrapolation of optical characteristics indicates that direct bandgaps, ranging from 4.39 to 3.25 eV, have been achieved for the grown Zn1−xMgxS films, which are desirable for buffer or window layers of thin film photovoltaics.


Author(s):  
Abdulazeez O. Mousa ◽  
Nadir F. Habubi ◽  
Noor A. Nema

ZnO thin films deposited on various substrates including glass, quartz, and ITO (Indium Tin Oxide) coated on glass substrates have been conducted by (CSP) technique. Characterization techniques of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible, and photoluminescence (PL) spectra measurements were performed to investigate the effects of substrate on the structural and optical properties of ZnO thin films. Samples were prepared the thickness of thin films are (80 nm) and substrate temperature kept at (400oC) in all cases. Compressed nitrogen was used as a carrier gas. The XRD results indicated that the synthesized ZnO thin films have a pure wurtzite (hexagonal phase) structure. It can be seen that the highest texture coefficient was in (002) plane . So when a good crystalline substrate like quartz is used for depositing the film, the lattice matching with the deposited film material would be better. AFM measurement showed the grain size ranging from (62-86) nm. The optical studies showed that the thin film for ITO coated glass substrate higher transmittance than glass and quartz substrate. The optical band gap for ZnO thin films have two values for the same sample, and we will note the band gap of the thin films increasing with increase the crystalline of substrate. The energy gap from photoluminescence (PL) spectra is (3.369 eV) for all samples.


2019 ◽  
Vol 11 (20) ◽  
pp. 68-74
Author(s):  
Jamal. F. Mohammad

Cadmium sulfide (CdS) nanocrystalline thin films have been prepared by chemical bath deposition (CBD) technique on commercial glass substrates at 70ºC temperature. Cadmium chloride (CdCl2) as a source of cadmium (Cd), thiourea (CS(NH2)2) as a source of sulfur and ammonia solution (NH4OH) were added to maintain the pH value of the solution at 10. The characterization of thin films was carried out through the structural and optical properties by X-ray diffraction (XRD) and UV-VIS spectroscopy. A UV-VIS optical spectroscopy study was carried out to determine the band gap of the nanocrystalline CdS thin film and it showed a blue shift with respect to the bulk value (from 3.9 - 2.4eV). In present work effects of thickness on the structural and optical properties of CdS nanocrystalline thin films were discussed.


2014 ◽  
Vol 941-944 ◽  
pp. 1302-1305
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Zn0.99-xCo0.01AlxO (x=0, 0.01,) thin films have been prepared by a sol-gel method. The structural and optical properties of the samples were investigated. X-ray diffraction and EDX spectrum indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping,the intensity ratio of the visible to UV emission increases, which is attributed to the increase of O vacancies and Zn interstitials .


2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

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