Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

2011 ◽  
Vol 110-116 ◽  
pp. 1406-1410
Author(s):  
Hai Yi Li ◽  
Yan Lai Wang ◽  
Shi Liang Ban ◽  
Yi Min Wang
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Film Sample ◽  
X Ray ◽  
Gap Energy ◽  
Cds Thin Films ◽  
Cubic Structure

CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

Effect of bath temperature on the chemical bath deposition of PbSe thin films

1970 ◽  
Vol 6 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Lead Nitrate ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
Sodium Selenate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132

scholarly journals Effects of Deposition Time on the Morphology, Structure, and Optical Properties of PbS Thin Films Prepared by Chemical Bath Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
B. Abdallah ◽  
A. Ismail ◽  
H. Kashoua ◽  
W. Zetoun
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Lead sulfide thin films were prepared by chemical bath deposition (CBD) on both glass and Si (100) substrates. XRD analysis of the PbS film deposited at 25°C showed that the prepared films have a polycrystalline structure with (200) preferential orientation. Larger grains could be obtained by increasing the deposition time. The prepared films were also chemically characterized using X-ray photoelectron spectroscopy (XPS), which confirmed the presence of lead and sulfur as PbS. While energy dispersive X-ray spectroscopy (EDX) technique was used to verify the stoichiometry of the prepared films. Atomic force microscopy (AFM) was used to study the change in the films’ morphology with the deposition time. The effect of the deposition time, on both optical transmittance in the UV-Vis-NIR region and the structure of the film, was studied. The obtained results demonstrated that the optical band gap decreased when the thickness increased.

In-situ X-ray photoelectron spectroscopy analysis of the initial growth of CdS thin films by chemical bath deposition

2019 ◽  
Vol 682 ◽  
pp. 142-146 ◽  
Author(s):  
R. Garza-Hernández ◽  
A. Carrillo-Castillo ◽  
V.H. Martínez-Landeros ◽  
M.A. Martínez-Puente ◽  
E. Martínez-Guerra ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Initial Growth ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Cds Thin Films

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

Effect of Nb doping on morphology, crystal structure, optical band gap energy of TiO2 thin films

2014 ◽  
Vol 14 (3) ◽  
pp. 421-427 ◽  
Author(s):  
Deuk Yong Lee ◽  
Ju-Hyun Park ◽  
Young-Hun Kim ◽  
Myung-Hyun Lee ◽  
Nam-Ihn Cho
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Gap Energy ◽  
Nb Doping
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