scholarly journals Effects of Deposition Time on the Morphology, Structure, and Optical Properties of PbS Thin Films Prepared by Chemical Bath Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
B. Abdallah ◽  
A. Ismail ◽  
H. Kashoua ◽  
W. Zetoun
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Lead sulfide thin films were prepared by chemical bath deposition (CBD) on both glass and Si (100) substrates. XRD analysis of the PbS film deposited at 25°C showed that the prepared films have a polycrystalline structure with (200) preferential orientation. Larger grains could be obtained by increasing the deposition time. The prepared films were also chemically characterized using X-ray photoelectron spectroscopy (XPS), which confirmed the presence of lead and sulfur as PbS. While energy dispersive X-ray spectroscopy (EDX) technique was used to verify the stoichiometry of the prepared films. Atomic force microscopy (AFM) was used to study the change in the films’ morphology with the deposition time. The effect of the deposition time, on both optical transmittance in the UV-Vis-NIR region and the structure of the film, was studied. The obtained results demonstrated that the optical band gap decreased when the thickness increased.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Preparation and Properties of CdS Thin Films Deposited by Chemical Bath Deposition

2011 ◽  
Vol 110-116 ◽  
pp. 1406-1410
Author(s):  
Hai Yi Li ◽  
Yan Lai Wang ◽  
Shi Liang Ban ◽  
Yi Min Wang
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Film Sample ◽  
X Ray ◽  
Gap Energy ◽  
Cds Thin Films ◽  
Cubic Structure

CdS thin films deposited on glass substrate are prepared by chemical bath deposition using the reaction between CdSO4 and CS (NH2)2. The composition, surface morphology and structural properties of as-deposited and annealed CdS thin films were studied using scanning electron microscopy (SEM), X-ray diffractometry (XRD), energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) techniques. The results indicate that the dense, homogeneous polycrystalline CdS thin films with smooth surface can be obtained by chemical bath deposition. The CdS thin films have cubic structure and the ratio of S and Cd is 1:1 in CdS thin films. Optical properties of CdS films were measured with ultraviolet-visible spectrophotometer. The optical band gap energy (Eg) of film sample was found to be 2.31 eV.

Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1165 ◽  
Author(s):  
Jorge G. Garza ◽  
Sadasivan Shaji ◽  
Ana Maria Arato Tovar ◽  
Eduardo Perez Tijerina ◽  
Alan Castillo Roderiguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Close Contact ◽  
Optical Transmittance ◽  
Halogen Lamp ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Antimony Selenide

AbstractSilver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300-390°C in vacuum (∼10−3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 °C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp.

scholarly journals Оптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe

2019 ◽  
Vol 126 (5) ◽  
pp. 538
Author(s):  
А.Г. Гусейнов ◽  
В.М. Салманов ◽  
Р.М. Мамедов ◽  
А.А. Салманова ◽  
Ф.М. Ахмедова
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Force Microscopy ◽  
Photoelectric Properties ◽  
Atomic Force ◽  
Current Voltage ◽  
Luminescence Characteristics

AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.

INFLUENCE OF THE ULTRASONIC VIBRATION ON CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS

2009 ◽  
Vol 16 (06) ◽  
pp. 895-899 ◽  
Author(s):  
QI LIU ◽  
GUOBING MAO
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Bath Deposition ◽  
Ultrasonic Vibration ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Transmission Measurement ◽  
Atomic Force ◽  
The Us ◽  
Zns Films

Chemical bath deposition (CBD) and ultrasonic chemical bath deposition (US-CBD) of ZnS thin films from NH 4 OH/SC ( NH 2)2/ ZnSO 4 solutions have been studied. The influence of the ultrasonic vibration on properties of ZnS thin films has been investigated. The growth rate, structure, and properties of ZnS thin film deposited by different CBD techniques were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM). The results show that the growth rate of US-CBD is slower than that of CBD. The XRD analysis of as-deposited ZnS films shows that the films are both cubic ZnS structure and the crystallinity of US-CBD ZnS film is higher than that of CBD ZnS film. SEM studies indicate that adhesion particles on the US-CBD ZnS surface are fewer than that on the CBD ZnS surface. Moreover, the film prepared by US-CBD is homogeneous and with high compactness. The rms roughness (R rms ) value of CBD ZnS film is higher than that of US-CBD. Transmission measurement shows that the optical transmittance of US-CBD ZnS is higher than that of CBD ZnS , and the optical transmittance is above 90% when the wavelength is over 470 nm. The band gap (Eg) values of the films deposited by CBD and US-CBD are 3.50 and 3.67 eV, respectively.

Mechanical Properties and Morphology of Pulsed – Laser Deposited BaTiO3 Thin Films

2003 ◽  
Vol 780 ◽  
Author(s):  
Jie Xu ◽  
Daniel P. Durisin ◽  
Gregory W. Auner
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Scratch Test ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Background Gas

AbstractBaTiO3 thin films have been grown on Si(100) substrate by KrF pulsed – laser deposition (PLD). The process parameters such as background gas pressure, substrate temperature, and laser fluence were varied in order to investigate their influence on the crystal structure, surface morphology and mechanical properties. The films were characterized by X-ray diffraction (XRD), UV/VIS/NIR spectrometer, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The hardness, Young's modules and scratch testing of BaTiO3 films were measured using nano-indenter. The stoichiometric BaTiO3 films having uniform grains were grown. The defects and particulates were generated at higher laser fluence. The size and density of particulates were increased with tighter laser focus. The results from dynamic scratch test indicated that the films with good adhesion were grown at moderate laser fluence.

scholarly journals Deposition and characterization of Cu4SnS4 thin films by chemical bath deposition method

2010 ◽  
Vol 29 (1) ◽  
pp. 97 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Abdul Halim Abdullah ◽  
Saravanan Nagalingam ◽  
Ho Soon Min
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Chemical Bath Deposition ◽  
Chemical Bath Deposition Method ◽  
Oxide Glass ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

A low cost chemical bath deposition method has been used for the preparation of Cu4SnS4 thin films onto indium tin oxide glass substrate. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (1.5) were optimized to obtain good quality thin films. The structural, surface morphological and optical properties of thin films were studied by X-ray diffraction, an atomic force microscopy and an UV-Vis Spectrophotometer, respectively. The X-ray diffraction study revealed that the Cu4SnS4 films were polycrystalline in nature with the preferential orientation along the (221) plane. The atomic force microscopy results indicated that the films were smooth, uniform and the substrate surface was covered completely at these experimental conditions. These films exhibited p-type semiconductor behavior with the band gap energy about 1.57 eV.

scholarly journals PREPARATION AND CHARACTERIZATION OF IRON SULPHIDE THIN FILMS BY CHEMICAL BATH DEPOSITION METHOD

2010 ◽  
Vol 10 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Anuar Kassim ◽  
Tan WeeTee ◽  
Dzulkefly Kuang Abdullah ◽  
Atan Mohd. Sharif ◽  
Ho SoonMin ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Substrate Surface ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C), deposition period (90 min), electrolyte concentration (0.15 M) and pH of the reactive mixture (pH 2.5). The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110) preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

Matrix Assisted Pulsed Laser Evaporation of Poly (D, L) Lactic Acid Films

2004 ◽  
Vol 845 ◽  
Author(s):  
Timothy M. Patz ◽  
Anand Doraiswamy ◽  
Roger Narayan ◽  
Nicola Menegazzo ◽  
Christine Kranz ◽  
...  
Keyword(s):  
Thin Films ◽  
Lactic Acid ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Absorption Bands ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Tissue Interface

ABSTRACTWe have deposited poly (D, L lactic acid) (PDLLA) thin films using matrix assisted pulsed laser evaporation (MAPLE). FTIR spectroscopy revealed that the PDLLA had similar absorption bands to the dropcast material. X-ray photoelectron spectroscopy has shown that peaks corresponding to C-H, C-O and C=O represented 38.4, 30.1 and 31.4% of the C1s spectrum, respectively. XPS O1s analysis revealed that the O=C and O-C components make up 52 and 48 % of the O1s content. Atomic force microscopy revealed that MAPLE deposition provides smooth, continuous thin biomaterial films. These matrix assisted pulsed laser evaporation-deposited biomaterial thin films may serve to improve the implant/tissue interface.

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