Temporary Resistive Switching Effect in Cu2O Based Heterostructure

2013 ◽  
Vol 401-403 ◽  
pp. 836-839
Author(s):  
Chang Kun Wu ◽  
Yong Dan Zhu ◽  
Hong Hua Liao ◽  
Jian Jun Tan
Keyword(s):  
Resistive Switching ◽  
Oxygen Pressure ◽  
Switching Effect ◽  
Carrier Injection ◽  
Cu2o Films ◽  
Reset Pulse ◽  
Resistive Switching Effect ◽  
Better Than

We report a temporary resistive switching (RS) behavior of Cu2O based heterostructure. The Cu2O films were deposited by PLD method under different oxygen pressure (10-2 Pa and 10Pa). The results show that the RS performance of Cu2O (10Pa) is better than that of Cu2O (10-2 Pa). The Cu2O (10Pa) based heterostructure shows high resistive switching ratio of over 103 at read voltage of -0.5V after applied 3V/-5V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages. It is demonstrated that the RS mechanism agrees with the carrier injection-trapped/detrapped process at the interface.

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect

Resistive Switching Effect of the Structure Based on Silicon Nitride

2021 ◽  
Vol 66 (1) ◽  
pp. 133-138
Author(s):  
F. F. Komarov ◽  
I. A. Romanov ◽  
L. A. Vlasukova ◽  
I. N. Parkhomenko ◽  
A. A. Tsivako ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Resistive Switching ◽  
Switching Effect ◽  
Resistive Switching Effect

Resistive Switching Effect with ON/OFF Current Relation up to 10 9 in 2D Printed Composite Films of Fluorinated Graphene with V 2 O 5 Nanoparticles

2019 ◽  
Vol 5 (10) ◽  
pp. 1900310
Author(s):  
Artem I. Ivanov ◽  
Anton K. Gutakovskii ◽  
Igor A. Kotin ◽  
Regina A. Soots ◽  
Irina V. Antonova
Keyword(s):  
Resistive Switching ◽  
Composite Films ◽  
Switching Effect ◽  
Fluorinated Graphene ◽  
Resistive Switching Effect

Resistive switching effect based on graphene-embedded poly(4-vinyl phenol) composite film by spinning coating

2020 ◽  
Vol 31 (21) ◽  
pp. 18605-18613
Author(s):  
Enming Zhao ◽  
Xiaoqi Li ◽  
Xiaodan Liu ◽  
Chen Wang ◽  
Guangyu Liu ◽  
...  
Keyword(s):  
Composite Film ◽  
Resistive Switching ◽  
Switching Effect ◽  
Vinyl Phenol ◽  
Resistive Switching Effect
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