Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Here, we propose a Pt/HfO2/TaOx/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO2/TaOx/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resistive switching characteristics are achieved by the asymmetric device stack, which is an advantage of the current suppression in the crossbar array structure. The results show that the programmed data are lost over time and that the decay rate, which is verified from the retention test, can be adjusted by controlling the compliance current (CC). Based on these properties, we emulate bio-synaptic characteristics, such as short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF), in the self-rectifying I–V characteristics of the Pt/HfO2/TaOx/TiN bilayer memristor device. The PPF characteristics are mimicked by replacing the bio-stimulation with the interval time of paired pulse inputs. The typical potentiation and depression are also implemented by optimizing the set and reset pulse. Finally, we demonstrate the natural depression by varying the interval time between pulse inputs.

Advanced Improvement in Speed of Operation of 3-Stage CMOS Ring Oscillator Clock Generation using CPG

The Ring oscillator is a member of time delay Oscillators. In this Ring oscillator it uses odd number of inverters and has a gain greater than one. In normal Ring Oscillator architecture the performance is very low due to power gating mechanism. By using CPG technique the performance is increased and also utilizes low power for operation. This Ring oscillator by using CPG technique is affected by pressure and temperature variations. By using 3-stage CMOS ring oscillator the efficiency and performance is increased. In CMOS Ring oscillator power supervision (PS) and efficiency is increased. Most of the architecture is planned for cut back the ability within the IPs to provide power gating, with the task of falling system level control gating. In this CMOS Ring oscillator the output of each NOT gate is given to next stage in order to improve the system latency. For CMOS Ring oscillator, there is no output is given to system, but Reset pulse will drive the entire architecture. In CPG power of the device will change in cyclic manner, device will be ON and OFF over small duration of time. By this proposed method over all power consumption and speed of operation is increased

FPGA implementation of power on self-test towards combo card

The Combo Card is a legacy trunk and subscriber card which provides loop dialing, MAGNETO, FXS, FXO, E&M and SHDSL two wire ports. The Purpose of this Card is to Facilitate Voice and Data Services for the User in Small Deployment. This Module is going to be plugged into Line Card V3 and used in TDM Router. As an FPGA Engineers, Our main Focus is on FPGA part on this SERVICES CARD. We are Using Spartan-6 FPGA in this Project. The Name COMBO CARD isCame into Existence as we are Combining Many Interfaces viz., FXS, FXO, LD, E & M, Magneto, and SHDSL. In this study We are Dealing With Respect to FPGA by Using VHDL and Generating Clock and Sync Pulse 8.192 M Hz Generation for FXO and FXS, SHDSL Control Pin Mapping, Power on Self-Test With Respect to Clock Monitor and Generation of Reset Pulse 300us For all the Devices Connected to FPGA, So, that the Title FPGA Implementation of Power on Self-Test On Services Card Justifies.

Temporary Resistive Switching Effect in Cu2O Based Heterostructure

We report a temporary resistive switching (RS) behavior of Cu2O based heterostructure. The Cu2O films were deposited by PLD method under different oxygen pressure (10-2 Pa and 10Pa). The results show that the RS performance of Cu2O (10Pa) is better than that of Cu2O (10-2 Pa). The Cu2O (10Pa) based heterostructure shows high resistive switching ratio of over 103 at read voltage of -0.5V after applied 3V/-5V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages. It is demonstrated that the RS mechanism agrees with the carrier injection-trapped/detrapped process at the interface.