Influence of Ge and Si Doping on the Microstructure and Dielectric Properties of Barium Titanate Ceramics

2013 ◽  
Vol 464 ◽  
pp. 44-49
Author(s):  
Zhen Jiang Shen ◽  
Li Na Bing ◽  
Hong Yan Peng ◽  
Shao Hua Gong ◽  
Wei Wu

GeO2 has been doped solely and together with SiO2 into barium titanate ceramics by mixing and calcination. The microstructure and dielectric properties of doped BaTiO3 have been characterized. When doped in BaTiO3, Ge4+ ion could incorporated into the crystal lattice of BaTiO3 to occupied Ti4+ sites. For relative smaller Ge4+ ion, the tetragonal phase could be enhanced. As dielectric properties have strong relation to tetragonal phase. The relative permittivity could be increased in this mechanism. However, the high leakage current which induced by more ionic defect was also lead to high dielectric loss. Besides, the assemble in grain boundary by Ge4+ ion may also have effect. Results on the GeO2-SiO2 co-doped sample showed that the mechanisms of Ge doping and Si doing could happen at one time.

2014 ◽  
Vol 602-603 ◽  
pp. 700-704
Author(s):  
Min Jia Wang ◽  
Qi Long Zhang ◽  
Xin Hui Zhao ◽  
Hui Yang

Multilayer ceramic capacitors (MLCC) are important functional components of electronic information technology. The development of AC MLCC requires low dielectric loss and high AC breakdown voltage. In this paper, Y-Al-Ga-Si co-doped barium titanate ceramics were prepared by conventional solid state method. Microstructures, surface morphology and dielectric properties were investigated by X-ray diffraction, SEM, and LCR analyzer, respectively. Y3+ entered into the lattice of BaTiO3, replaced A-sites and B-sites, suppressed grain growth effectively, and made crystal structure change from tetragonal to pseudo-cubic, which reduced dielectric loss and lowered the Curie peak. The sintering characteristic and permittivity can be improved by the incorporation of Al and Ga. BaTiO3 -0.06Y2O3 - 0.02Ga2O3 -0.01Al2O3 -0.01SiO2 ceramics sintered at 1380°C achieved good dielectric properties: εr= ~2223, tanδ =~1.1% (at 1kHz), ΔC/C25 <~15.26% (from 55°C to 150°C).


2021 ◽  
pp. 160836
Author(s):  
Khalid Mujasam Batoo ◽  
Ritesh Verma ◽  
Ankush Chauhan ◽  
Rajesh Kumar ◽  
Muhammad Hadi ◽  
...  

1995 ◽  
Vol 10 (2) ◽  
pp. 306-311 ◽  
Author(s):  
S. Wada ◽  
T. Suzuki ◽  
T. Noma

Using titanium nitrate solution stabilized by chelation, amorphous fine particles of the Ba-Ti-O system were prepared by the mist decomposition method in air. After calcination of these particles, barium titanate ceramics were prepared using the hot uniaxial pressing method, and various properties were investigated. As a result, the grain sizes could be controlled over the range from 58 nm to 187 nm by the sintering temperatures and/or the calcination temperatures, keeping the density almost constant. Moreover, the dielectric properties of the samples showed that the relative permittivity decreased with decreasing grain size, and Curie temperature also shifted to lower temperatures in the same way. In this study, we first found that Curie temperature existed in the barium titanate ceramics with grain sizes from 58 to 147 nm.


1985 ◽  
Vol 58 (4) ◽  
pp. 1619-1625 ◽  
Author(s):  
G. Arlt ◽  
D. Hennings ◽  
G. de With

2011 ◽  
Vol 485 ◽  
pp. 39-42 ◽  
Author(s):  
Kenta Yamashita ◽  
Shigehito Shimizu ◽  
Ichiro Fujii ◽  
Kouichi Nakashima ◽  
Nobuhiro Kumada ◽  
...  

ANbO3– BaTiO3(A=K, Na, or K0.5Na0.5) system ceramics were prepared using a conventional sintering method, and their dielectric properties were investigated. It was found that the dielectric constant of KNbO3-BaTiO3and (K0.5Na0.5) NbO3- BaTiO3system ceramics did not strongly depend on temperature between 20 and 400 °C, making them useful for capacitor application.


2003 ◽  
Vol 86 (3) ◽  
pp. 511-513 ◽  
Author(s):  
Antonio Feteira ◽  
Kumaravinothan Sarma ◽  
Neil McN. Alford ◽  
Ian M. Reaney ◽  
Derek C. Sinclair

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