Investigation of the Electrical Resistivity of 20μm-Gap Gold-DNA-Gold Structure: Exploiting the Current-Voltage Characteristics under a Variable External Magnetic Field

2014 ◽  
Vol 554 ◽  
pp. 155-159 ◽  
Author(s):  
Nadia Mahmoudi Khatir ◽  
Zulkurnain Abdul-Malek ◽  
Seyedeh Maryam Banihashemian
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
External Magnetic Field ◽  
Molecular Electronics ◽  
Electronic Devices ◽  
Charge Carriers ◽  
Current Voltage ◽  
Dna Strands ◽  
Pcr Method ◽  
Current Voltage Characteristics

Deoxyribonucleic acid (DNA), as the most important molecule in nature, holds promise as a key element of the molecular electronics as its utilization in the synthesis of electronic devices such as micro and nanosensors has increased remarkably during the recent years. Our work is devoted to an experimental study of the electrical resistivity of a gold-DNA-gold (GDG) structure in the presence of a variable external magnetic field. The DNA strands, extracted by the PCR method, were used to fabricate the GDG structures. The resistivity of the structure was found to rise sharply with the magnitude of the exerted magnetic field due to onset and progression of the cyclotron effects in charge carriers. Such a distinct current-voltage signature can possibly be employed for realization of an accurate magnetic sensor.

Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field

2012 ◽  
Vol 535-537 ◽  
pp. 1350-1353 ◽  
Author(s):  
Nadia Mahmoudy Khatir ◽  
Seyedeh Maryam Banihashemian ◽  
Vengadesh Periasamy ◽  
Wan Haliza Abd Majid ◽  
Saadah Abdul Rahman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Silicon Substrate ◽  
Deoxyribonucleic Acid ◽  
Semiconductor Materials ◽  
Future Application ◽  
Current Voltage ◽  
Exponential Decrease ◽  
Dna Strands ◽  
Pcr Method

We utilized Deoxyribonucleic acid (DNA) strands immobilized between a metal gap and its behavior was investigated. The DNA strands were initially prepared using the PCR method while gaps of 10.00 μm lengths were created on gold layer deposited onto silicon substrate. Once immobilized, current-voltage characterization was carried out on the Au-DNA-Au structure fabricated under the presence and absence of magnetic field. Experimental results clearly highlight the behavior of the DNA strands similar to semiconductor materials. An exponential decrease observed in the current in presence of external magnetic field suggests possible future application as a magnetic sensor.

scholarly journals Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

2021 ◽  
Vol 63 (5) ◽  
pp. 606
Author(s):  
О.Б. Романова ◽  
C.C. Аплеснин ◽  
Л.В. Удод
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Hall Effect ◽  
Charge Carriers ◽  
Hall Constant ◽  
Temperature Range ◽  
Current Voltage ◽  
Semiconductor Compounds ◽  
Current Voltage Characteristics ◽  
Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

Point-contact spectroscopy probing the NbSe3 CDW gap in different crystallographic orientations

2002 ◽  
Vol 12 (9) ◽  
pp. 119-122
Author(s):  
A. A. Sinchenko ◽  
P. Monceau
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Applied Magnetic Field ◽  
Energy Gap ◽  
Point Contact ◽  
Point Contacts ◽  
Energy Gaps ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Crystallographic Orientations

We have measured the differential current-voltage characteristics of normal metal-NbSe3 direct point contacts (without insulating barrier) formed along different crystallographic orientations under applied magnetic field with different orientations. At low temperature two energy gaps, $\Delta_{p1}$ and $\Delta_{p2}$, corresponding to the high and the low-temperature CDW were observed simultaneously as a singulanty of the excess resistance which is attributed to an analog of Andreev reflection, in which the incident electron reflects on the Peierls energy gap barriers with its charge unchanged. An applied magnetic field up to 8.5 T does not lead to a change in the density of states and in the Peierls energy gaps, suggesting that the large magnetoresistance observed in NbSe3 might not result from the change in the CDW order parameter with magnetic field but rather from the increase of scattering of non-condensed to CDW carriers.

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