scholarly journals Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

2021 ◽  
Vol 63 (5) ◽  
pp. 606
Author(s):  
О.Б. Романова ◽  
C.C. Аплеснин ◽  
Л.В. Удод
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Hall Effect ◽  
Charge Carriers ◽  
Hall Constant ◽  
Temperature Range ◽  
Current Voltage ◽  
Semiconductor Compounds ◽  
Current Voltage Characteristics ◽  
Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

scholarly journals Электрические свойства пленок металлоорганических перовскитов

2019 ◽  
Vol 61 (2) ◽  
pp. 243
Author(s):  
А.М. Ершова ◽  
М.К. Овезов ◽  
И.П. Щербаков ◽  
А.Н. Алешин
Keyword(s):  
Phase Transitions ◽  
Electrical Properties ◽  
Orthorhombic Phase ◽  
Activation Energies ◽  
Charge Carriers ◽  
Temperature Range ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Characteristic Points ◽  
Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

scholarly journals Nonlinear Response of a Superconductor of the Bi-Sr-Ca-Cu-O System to an Alternating Magnetic Field in the Superconducting Transition Temperature Range

2018 ◽  
Vol 185 ◽  
pp. 08005
Author(s):  
Alexander Sergeev ◽  
Igor Golev ◽  
Victoria Gvozdevskaya ◽  
Anastasia Barkalova
Keyword(s):  
Magnetic Field ◽  
Nonlinear Response ◽  
Alternating Magnetic Field ◽  
Resistive State ◽  
Superconducting Transition ◽  
Critical Temperatures ◽  
Temperature Range ◽  
Nonlinear Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

The nonlinear response of the superconductor of the Bi-Sr-Ca-Cu-O system in the temperature range of the superconducting transition under the action of a harmonic alternating magnetic field is experimentally studied. For multiphase superconductors having in their volume regions with distinct critical temperatures, the effect of odd harmonics in the response signal is observed. The contribution of crystallites and the system of weak bonds between the crystallites in the nonlinear response is singled out. It was found that the nonlinear properties of the investigated samples in the resistive state are determined mainly by the nonlinear current-voltage characteristics of the system of weak bonds between the crystallites.

Radiative and Electrical Properties of a Center-Post Cathode Magnetron Glow Discharge Device

1988 ◽  
Vol 42 (4) ◽  
pp. 576-583 ◽  
Author(s):  
Suzanne Tanguay ◽  
Richard Sacks
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Glow Discharge ◽  
Field Strength ◽  
Constant Current ◽  
Glow Discharge Plasma ◽  
Basic Operation ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Magnetic Field

Current-voltage characteristics and spatially resolved atomic emission data are used to describe the basic operation of a magnetron glow discharge plasma device. The low-pressure glow discharge lamp uses a center-post cathode and a concentric ring-shaped anode. A coaxial magnetic field of a few hundred Gauss is used to achieve magnetron operation where plasma electrons are trapped in closed paths which are concentric with the electrode structure. This results in dramatic changes in the radiative and electrical properties of the device. With constant current, lamp operating voltage may be reduced by more than a factor of two when the magnetic field is present. The effects of filler gas pressure and magnetic field strength on the current-voltage characteristics are presented. The presence of the magnetic field results in a radial contraction of the plasma. This contraction increases with increasing field strength and with decreasing pressure. Ion lines from the Ar filler gas are more affected by the field than are neutral-atom lines from the cathode material.

scholarly journals Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

2021 ◽  
Vol 55 (6) ◽  
pp. 502
Author(s):  
А.А. Семакова ◽  
Н.Л. Баженов ◽  
К.Д. Мынбаев ◽  
А.В. Черняев ◽  
С.С. Кижаев ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Solid Solutions ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Leakage Currents ◽  
Temperature Range ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Additional Channel

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

Atomic Force Microscopy of the Local Electrical Properties of Bilayer Polyaniline-Polystyrene/P(VDF-TrFE) Composite

2021 ◽  
Vol 899 ◽  
pp. 506-511
Author(s):  
Artem V. Budaev ◽  
Ivanna N. Melnikovich ◽  
Vasily E. Melnichenko ◽  
Nikita A. Emelianov
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Polymer Nanocomposite ◽  
Charge Carriers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Piezoelectric Force Microscopy ◽  
Microscopy Techniques

Atomic force microscopy techniques (conductive-AFM, I-V spectroscopy and PFM) were used for characterisation of the local electrical properties of bilayer polyaniline-polystyrene/P(VDF-TrFE) polymer nanocomposite. Observed hysteresis of current-voltage characteristics confirms its memristive properties. It was caused by the influence of the ferroelectric polarization of P(VDF-TrFE) layer, the domain structure of which was visualised by piezoelectric force microscopy on the transport of charge carriers at the interface.

Investigation of the Electrical Resistivity of 20μm-Gap Gold-DNA-Gold Structure: Exploiting the Current-Voltage Characteristics under a Variable External Magnetic Field

2014 ◽  
Vol 554 ◽  
pp. 155-159 ◽  
Author(s):  
Nadia Mahmoudi Khatir ◽  
Zulkurnain Abdul-Malek ◽  
Seyedeh Maryam Banihashemian
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
External Magnetic Field ◽  
Molecular Electronics ◽  
Electronic Devices ◽  
Charge Carriers ◽  
Current Voltage ◽  
Dna Strands ◽  
Pcr Method ◽  
Current Voltage Characteristics

Deoxyribonucleic acid (DNA), as the most important molecule in nature, holds promise as a key element of the molecular electronics as its utilization in the synthesis of electronic devices such as micro and nanosensors has increased remarkably during the recent years. Our work is devoted to an experimental study of the electrical resistivity of a gold-DNA-gold (GDG) structure in the presence of a variable external magnetic field. The DNA strands, extracted by the PCR method, were used to fabricate the GDG structures. The resistivity of the structure was found to rise sharply with the magnitude of the exerted magnetic field due to onset and progression of the cyclotron effects in charge carriers. Such a distinct current-voltage signature can possibly be employed for realization of an accurate magnetic sensor.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Point-contact spectroscopy probing the NbSe3 CDW gap in different crystallographic orientations

2002 ◽  
Vol 12 (9) ◽  
pp. 119-122
Author(s):  
A. A. Sinchenko ◽  
P. Monceau
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Applied Magnetic Field ◽  
Energy Gap ◽  
Point Contact ◽  
Point Contacts ◽  
Energy Gaps ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Crystallographic Orientations

We have measured the differential current-voltage characteristics of normal metal-NbSe3 direct point contacts (without insulating barrier) formed along different crystallographic orientations under applied magnetic field with different orientations. At low temperature two energy gaps, $\Delta_{p1}$ and $\Delta_{p2}$, corresponding to the high and the low-temperature CDW were observed simultaneously as a singulanty of the excess resistance which is attributed to an analog of Andreev reflection, in which the incident electron reflects on the Peierls energy gap barriers with its charge unchanged. An applied magnetic field up to 8.5 T does not lead to a change in the density of states and in the Peierls energy gaps, suggesting that the large magnetoresistance observed in NbSe3 might not result from the change in the CDW order parameter with magnetic field but rather from the increase of scattering of non-condensed to CDW carriers.

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