A High Uniformity Readout Integrated Circuit for Infrared Focal Plane Array Applications

2014 ◽  
Vol 602-605 ◽  
pp. 2632-2636
Author(s):  
Tong Zhou ◽  
Tao Dong ◽  
Yan Su ◽  
Yong He
Keyword(s):  
Integrated Circuit ◽  
Focal Plane ◽  
Infrared Image ◽  
Low Frequency ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Cmos Process ◽  
Readout Integrated Circuit ◽  
Practical Applications ◽  
High Uniformity

Infrared focal plane arrays (IRFPA) suffer from inherent low frequency and fixed patter noise (FPN). To achieve high quality infrared image by mitigating the FPN of IRFPAs, a novel low-noise and high uniformity readout integrated circuit (ROIC) has been proposed. A correlated double sampling (CDS) with single capacitor method has been adopted in the ROIC design which can effectively reduce the FPN, KTC and 1/f noise. A 4×4 experimental readout chip has been designed and fabricated using the SMIC 0.18 μm CMOS process. Both the function and performance of the proposed readout circuit have been verified by experimental results. The test results show that the proposed ROIC has a good performance in practical applications.

Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness

2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang
Keyword(s):  
Thermal Shock ◽  
Indium Antimonide ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Three Dimensional ◽  
Fracture Probability ◽  
Focal Plane Arrays ◽  
Thermal Shock Test ◽  
Readout Integrated Circuit ◽  
Three Dimensional Modeling

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.

A LOW POWER HIGH RESOLUTION ROIC DESIGN WITH 14-BIT COLUMN-LEVEL ADC FOR 384 × 288 IRFPA

2013 ◽  
Vol 22 (09) ◽  
pp. 1340015 ◽  
Author(s):  
YAJING ZHANG ◽  
WENGAO LU ◽  
GUANNAN WANG ◽  
ZHONGJIAN CHEN ◽  
YACONG ZHANG
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Low Noise ◽  
Cmos Process ◽  
Readout Integrated Circuit ◽  
Analog To Digital Conversion ◽  
Amplifier Design

A readout integrated circuit (ROIC) of infrared focal plane array (IRFPA) with low power and low noise is presented in this paper. It consists of a 384 × 288 pixel array and column-level A/D conversion circuits. The proposed system has high resolution because of the odd–even Analog to Digital Conversion (ADC) structure, containing correlated switches design, multi-Vth amplifier design and high speed high resolution comparator design including latch-stage. Designed and simulated in 0.35-μm CMOS process, this high performance ROIC achieves 81.24 dB SNR at 8.64 KS/s consuming 98 mW under 5 V voltage supply, resulting in an ENOB of 13.2-bit.

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