A Cross-Sectional TEM Specimen of a Multilayer Thin Film Prepared Using the FIB Technique

2015 ◽  
Vol 771 ◽  
pp. 108-111
Author(s):  
Harini Sosiati ◽  
Satoshi Hata ◽  
Toshiya Doi
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Multilayer Film ◽  
Ion Beam ◽  
Substrate Surface ◽  
Thin Foil ◽  
Advanced Materials ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Stem Image

A focused ion beam (FIB) mill equipped with a microsampling (MS) unit and combined with transmission electron microscopy (TEM)/scanning TEM-energy dispersive x-ray spectroscopy (STEM-EDXS) is a powerful tool for studies of the functional advanced materials. For the studies, the specimen must be prepared as a thin foil which is tranparent to the electron beam. Focused ion beam is very effective method for fabricating TEM specimen of the cross-sectional thin film with the “lift-out” technique using a tungsten (W)-needle probe as a micromanipulator. A multilayer film of MgB2/Ni deposited on a Si (001) substrate prepared by FIB-MS technique is presented. Before FIB fabrication, the surface of the multilayer film was coated with W-film to prevent the surface from bombardment by the ion beam. A bright field (BF)-STEM image of the multilayer film related to two-dimensional (2D) elemental mapping clearly showed the presence of MgB2-and Ni-nanolayers. The measured experimental spacing between Ni-nanolayers was comparable with the actual specimen design, but the thickness of Ni-nanolayer was not. Unexpected nanostructures of the formation of SiO2 film on the substrate surface and holes within the film were observed.

FIB Sample Preparation of Polymer Thin Films on Hard Substrates Using the Shadow-FIB Method

2009 ◽  
Vol 17 (6) ◽  
pp. 20-23 ◽  
Author(s):  
Suhan Kim ◽  
Gao Liu ◽  
Andrew M. Minor
Keyword(s):  
Thin Film ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Initial Sample ◽  
Cross Sectional ◽  
Site Specific ◽  
Transmission Electron ◽  
Hard Substrates

Focused ion beam (FIB) instrumentation has proven to be extremely useful for preparing cross-sectional samples for transmission electron microscopy (TEM) investigations. The two most widely used methods involve milling a trench on either side of an electron-transparent window: the “H-bar” and the “lift-out” methods [1]. Although these two methods are very powerful in their versatility and ability to make site-specific TEM samples, they rely on using a sacrificial layer to protect the surface of the sample as well as the removal of a relatively large amount of material, depending on the size of the initial sample. In this article we describe a technique for making thin film cross-sections with the FIB, known as Shadow FIBing, that does not require the use of a sacrificial layer or long milling times [2].

Characterization of Heterointerfaces in Thin-Film Transistors by Cross-Sectional Transmission Electron Microscopy

1996 ◽  
Vol 466 ◽  
Author(s):  
K. Kuroda ◽  
S. Tsuji ◽  
Y. Hayashi ◽  
H. Saka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multilayered Structure ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTHydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are now widely used as elements for active matrix liquid crystal displays. The nanometer-scale multilayered structure of a-Si:H TFTs has been characterized by cross-sectional transmission electron microscopy (TEM). The discrete layer construction of a faulty TFTs and the generation of defects during manufacturing processes have been investigated. A combination of focused ion beam (FIB) etching and cross-sectional TEM leads to a successful failure analysis. A contamination layer with a thickness of 10–30 nm and microvoids inside multilayers are identified in faulty TFTs. An a-Si layer on silicon nitride (SiNx) is crystallized during TEM observation. Electron energy loss spectroscopy analysis indicates that the diffusion of nitrogen into a-Si layer causes the crystallization.

FIB Plan and Side View Cross-Sectional TEM Sample Preparation of Nanostructures

2013 ◽  
Vol 20 (1) ◽  
pp. 133-140 ◽  
Author(s):  
Filip Lenrick ◽  
Martin Ek ◽  
Daniel Jacobsson ◽  
Magnus T. Borgström ◽  
L. Reine Wallenberg
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Side View ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

AbstractFocused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs–GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire–substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.

Cross-sectional Specimen Preparation of Fragile Failure Location in Thin-Film Transistors Using Focused Ion Beam Etching and Transmission Electron Microscope

1996 ◽  
Author(s):  
N. Miura ◽  
K. Tsujimato ◽  
R. Kanehara ◽  
N. Tsutsui ◽  
S. Tsuji
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
Transmission Electron ◽  
Failure Location

Abstract This paper describes how faulty thin-film transistors (TFTs) having fragile structures in themselves can be characterized by cross-sectional transmission electron microscopy (X-TEM) through the achievement of pinpoint accuracy in focused ion beam (FIB) etching. We demonstrate X-TEM analysis for faulty TFTs caused by mechanical damages, microvoid in their multilayers and long aluminum whiskers growing from the electrodes. X-TEM specimen were prepared by FIB etching without losing unique structures owing to fragile locations. Cross-sectional bright-field TEM micrographs clearly showed the details of cross sectional structure of fragile location. This pin-point X-TEM is quite helpful to identify faults and to reveal root causes of failures.

Cross-Sectional STEM Observation of Nanoparticle-Attached Silicon Wafer: Specimen Prepared by Focused Ion-Beam

2008 ◽  
Vol 8 (3) ◽  
pp. 1518-1522 ◽  
Author(s):  
Tetsu Yonezawa ◽  
Yoshinori Yamanoi ◽  
Hiroshi Nishihara
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Surface ◽  
Silicon Surfaces ◽  
Ion Beam Irradiation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Amorphous Si

A thermal hydrosilylation process could successfully immobilize 5-heptene-1-thiol-stabilized gold nanoparticles onto hydrogen-terminated silicon surfaces. In order to understand the immobilization structures, it is very important to observe the linkage between the nanoparticles and the substrate surface. For this purpose, a cross-sectional observation of gold nanoparticle-attached silicon substrate was carried out by using a high resolution scanning transmission electron microscopy (HR-STEM). The specimens were prepared by using a focused ion-beam (FIB) machine. According to the Ga ion-beam irradiation, many single-nano-sized nanoparticles were fused to grow up to larger particles and amorphous Si layers were generated.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

Cross-sectional Specimen Preparation and Observation of a Plasma Sprayed Coating Using a Focused Ion Beam/Transmission Electron Microscopy System

2000 ◽  
Vol 6 (3) ◽  
pp. 218-223
Author(s):  
Toshie Yaguchi ◽  
Takeo Kamino ◽  
Mitsumasa Sasaki ◽  
Gerard Barbezat ◽  
Ryoichi Urao
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Coating Film ◽  
Cross Sectional ◽  
X Ray ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Sprayed Coating ◽  
Plasma Sprayed

Abstract A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous layers with thickness of 2~10 nm. The Al/Fe X-ray intensity ratio was larger in bright contrast sublayers than that in dark contrast sublayers.

Sign in / Sign up

Export Citation Format

Share Document