scholarly journals Fabrication of Intrinsic Zinc Oxide-Coated, Aluminium-Doped Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors

2015 ◽  
Vol 773-774 ◽  
pp. 696-700
Author(s):  
Mohamad Hafiz Mamat ◽  
Mohd Firdaus Malek ◽  
N.N. Hafizah ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Doped Zno ◽  
And Performance

Fabrication and performance of metal-semiconductor-metal (MSM)–type intrinsic zinc oxide-coated, aluminium-doped ZnO nanorod array-based ultraviolet photoconductive sensors were reported and discussed. The Al-doped ZnO nanorod arrays were prepared using sonicated sol-gel immersion method. The coating process of intrinsic ZnO onto Al-doped ZnO nanorod arrays was performed using radio-frequency (RF) magnetron sputtering at different deposition times varying from 0 to 10 min. We observed that responsivity of the sensors decreased with increasing intrinsic ZnO deposition time, decreasing from 4.81 A/W without coating to 1.37 A/W after 10 min of coating. Interestingly, the sensitivity of the sensors improved with intrinsic ZnO coating, having a maximum value of 19.0 after 1 min coating.

scholarly journals Effects of Annealing Environments on the Solution-Grown, Aligned Aluminium-Doped Zinc Oxide Nanorod-Array-Based Ultraviolet Photoconductive Sensor

2012 ◽  
Vol 2012 ◽  
pp. 1-15 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Mohd Izzudin Che Khalin ◽  
Nik Noor Hafizah Nik Mohammad ◽  
Zuraida Khusaimi ◽  
Nor Diyana Md Sin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Surface Condition ◽  
Zno Nanorods ◽  
Average Diameter ◽  
Nanorod Array ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
High Concentration ◽  
Doped Zno

We have fabricated metal-semiconductor-metal- (MSM-) type ultraviolet (UV) photoconductive sensors using aluminium- (Al-) doped zinc oxide (ZnO) nanorod arrays that were annealed in different environments: air, oxygen, or a vacuum. The Al-doped ZnO nanorods had an average diameter of 60 nm with a thickness of approximately 600 nm that included the seed layer (with thickness~200 nm). Our results show that the vacuum-annealed nanorod-array-based UV photoconductive sensor has the highest photocurrent value of  2.43  ×  10-4 A. The high photocurrent is due to the high concentration of zinc (Zn) interstitials in the vacuum-annealed nanorod arrays. In contrast, the oxygen-annealing process applied to the Al-doped ZnO nanorod arrays produced highly sensitive UV photoconductive sensors, in which the sensitivity reached 55.6, due to the surface properties of the oxygen-annealed nanorods, which have a higher affinity for oxygen adsorption than the other samples and were thereby capable of reducing the sensor’s dark current. In addition, the sensor fabricated using the oxygen-annealed nanorod arrays had the lowest rise and decay time constants. Our result shows that the annealing environment greatly affects the surface condition and properties of the Al-doped ZnO nanorod arrays, which influences the performance of the UV photoconductive sensors.

Synthesis of Al-Doped ZnO Nanorod Arrays on Al-Doped ZnO Seed Layer and their Properties

2015 ◽  
Vol 1109 ◽  
pp. 266-270
Author(s):  
M.N. Wahida ◽  
M.H. Mamat ◽  
Mohamad Rusop
Keyword(s):  
Seed Layer ◽  
Sol Gel ◽  
Zinc Nitrate ◽  
Nitrate Hexahydrate ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Uv Emission ◽  
Doped Zno

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO3)2·6H2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C6H12N4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO3)3∙9H2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10-4 Scm-1. The peak of UV emission of the sample is at 380 nm.

Polyethylene glycol assisted growth of Sn-doped ZnO nanorod arrays prepared via sol-gel immersion method

2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  
Keyword(s):  
Polyethylene Glycol ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Immersion Method ◽  
Doped Zno

Nonstoichiometric Zinc Oxide Nanorod Arrays Doped Co or Ni as Effective Antimicrobial Materials

2012 ◽  
Vol 518-523 ◽  
pp. 760-763
Author(s):  
Chang Yun Chen ◽  
Quan Zhan Chen ◽  
Mei Shi ◽  
Feng Zhou ◽  
Chun Hua ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Functional Nanomaterials ◽  
Antimicrobial Materials ◽  
Doped Zno

Nonstoichiometric Zinc oxide (ZnO) nanorod arrays doped Co or Ni can be easily obtained by calicining soaked ZnO nanorod arrays. More importantly, the nonstoichiometric doped ZnO nanoarrays have more effective antimicrobial than pure ZnO nanoarrays, which means we can obtain a kind of promising new effective functional nanomaterials.

Performance of Ultraviolet Photoconductive Sensor Based on Aluminium-Doped Zinc Oxide Nanorod-Nanoflake Network Thin Film Using Aluminium Contacts

2013 ◽  
Vol 832 ◽  
pp. 298-302 ◽  
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Seed Layer ◽  
Uv Light ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Immersion Method ◽  
Coated Glass Substrate ◽  
Sensor Applications ◽  
Doped Zno

In this research, we fabricated UV photoconductive sensor using aluminium (Al)-doped ZnO nanorod-nanoflake network thin film. These nanostructures were deposited on the seed-layer-coated glass substrate using sonicated sol-gel immersion method. By using Al contacts, it was found that the performance of the UV photoconductive sensor is very good. The responsivity of the device was 46.4 mA/W with sensitivity of 17.5 under 365-nm UV light (5 mW/cm2) at bias voltage of 10 V. Our study revealed that these nanostructures are very promising material for the UV photoconductive sensor applications.

Photovoltaic Properties of Dye-Sensitized Solar Cells Using Novel Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Seeded Catalyst with Different Aspect Ratio

2015 ◽  
Vol 1109 ◽  
pp. 281-285
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
A.K. Shafura ◽  
M.F. Malik ◽  
A. Ishak ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dye Sensitized Solar Cells ◽  
Zno Thin Films ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Doped Zno

The Sn-doped ZnO thin films were deposited on glass and ITO by sol gel Spin Coating technique. The Structural and electrical properties of Sn-doped ZnO thin films were studied and discussed. The Sn-doped ZnO thin film particle sizes were decreased whenever the doping concentration increased. Besides that, the resistivity 7.7 x 102 Ω.cm was obtained at 2 at.% Sn-doped thin films and aligned ZnO nanorod arrays with large surface area were grown on 2 at.% Sn-doped ZnO film. Therefore, dye sensitized solar cell at 2.0 at.% Sn-doped ZnO thin films with aligned ZnO Nanorod arrays have improved in the photocurrent density and conversion efficiency.

Investigation of Stress and Electrical Properties of Air-Annealed and Oxygen-Annealed Aluminium-Doped Zinc Oxide Nanorod Arrays

2013 ◽  
Vol 832 ◽  
pp. 303-309
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Vertically Aligned ◽  
Doped Zno

In this research, we prepared aluminium (Al)-doped ZnO nanorod arrays on the glass substrate using sonicated sol-gel method. These nanorod arrays were annealed at 500 °C in air and oxygen environment using thermal furnace. Field emission scanning electron microscopy (FESEM) image reveals that nanorod arrays were deposited vertically aligned on the substrate. The stress characteristics of air-annealed and oxygen-annealed Al-doped ZnO nanorod arrays were investigated using Raman spectroscopy and X-ray diffraction (XRD) measurement. The electrical properties of the samples were investigated using two-probe current-voltage (I-V) measurement system. The results show that annealing atmospheres greatly influenced the stress and electrical properties of the nanorod arrays.

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