Performance of Ultraviolet Photoconductive Sensor Based on Aluminium-Doped Zinc Oxide Nanorod-Nanoflake Network Thin Film Using Aluminium Contacts

2013 ◽  
Vol 832 ◽  
pp. 298-302 ◽  
Author(s):  
M.H. Mamat ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
N.N. Hafizah ◽  
Mohd Firdaus Malek ◽  
...  

In this research, we fabricated UV photoconductive sensor using aluminium (Al)-doped ZnO nanorod-nanoflake network thin film. These nanostructures were deposited on the seed-layer-coated glass substrate using sonicated sol-gel immersion method. By using Al contacts, it was found that the performance of the UV photoconductive sensor is very good. The responsivity of the device was 46.4 mA/W with sensitivity of 17.5 under 365-nm UV light (5 mW/cm2) at bias voltage of 10 V. Our study revealed that these nanostructures are very promising material for the UV photoconductive sensor applications.

2015 ◽  
Vol 1109 ◽  
pp. 266-270
Author(s):  
M.N. Wahida ◽  
M.H. Mamat ◽  
Mohamad Rusop

Aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays have been synthesized on a glass substrate, where the seed layer is Al-doped ZnO thin film as well, using the sonicated sol–gel immersion method. The nanorods structure was synthesized by preparing a solution 0.0026 M of zinc nitrate hexahydrate (Zn (NO3)2·6H2O, 98%, Systerm) as a precursor, 0.1 M hexamethylenetetramine (HMT, C6H12N4, 99%, Aldrich) as a stabilizer and 0.001M aluminum nitrate nonahydrate (Al (NO3)3∙9H2O, 98%, Analar) as a dopant, dissolved in deionized (DI) water. The resistivity is 7626.72 Ωcm and the conductivity is 1.31 x 10-4 Scm-1. The peak of UV emission of the sample is at 380 nm.


2015 ◽  
Vol 773-774 ◽  
pp. 696-700
Author(s):  
Mohamad Hafiz Mamat ◽  
Mohd Firdaus Malek ◽  
N.N. Hafizah ◽  
Nor Diyana Md Sin ◽  
I. Saurdi ◽  
...  

Fabrication and performance of metal-semiconductor-metal (MSM)–type intrinsic zinc oxide-coated, aluminium-doped ZnO nanorod array-based ultraviolet photoconductive sensors were reported and discussed. The Al-doped ZnO nanorod arrays were prepared using sonicated sol-gel immersion method. The coating process of intrinsic ZnO onto Al-doped ZnO nanorod arrays was performed using radio-frequency (RF) magnetron sputtering at different deposition times varying from 0 to 10 min. We observed that responsivity of the sensors decreased with increasing intrinsic ZnO deposition time, decreasing from 4.81 A/W without coating to 1.37 A/W after 10 min of coating. Interestingly, the sensitivity of the sensors improved with intrinsic ZnO coating, having a maximum value of 19.0 after 1 min coating.


2015 ◽  
Vol 1109 ◽  
pp. 568-571
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
M.H. Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 1.0 at.%, 2.0 at.% and 3.0 at.%. The synthesized samples were characterized by Field Emission Scanning Electron Microscopy (FESEM).


2015 ◽  
Vol 1109 ◽  
pp. 564-567
Author(s):  
Shafura Karim ◽  
Shafeena Mohd Saad ◽  
Saurdi Ishak ◽  
Najwa Ezira Ahmed Azhar ◽  
Ruziana Mohamed ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. The synthesized samples were characterized by current-voltage (I-V) measurement and Field Emission Scanning Electron Microscopy (FESEM). The Sn doping concentration were varied at 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. FESEM images show that as the Sn concentration increased, the nanoparticles size of Sn-doped ZnO become denser and less grain boundary which might help in improvement of the electrical properties.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.


2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  

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