Electrohydrodynamic Atomization of Graphene Nano-Suspension

In this paper, graphene nanosuspension was spray deposited using electrohydrodynamic atomization (EHDA) technique, and the polydimethylsiloxane (PDMS) was used as the substrate during the EHDA process. The effect of the PDMS substrate before and after oxygen plasma treatment on the characteristics of EHDA was examined. A cone-jet mode of the EHDA of graphene nanosuspension was obtained using the oxygen plasma treated PDMS substrate. In addition graphene films were deposited on the oxygen plasma treated PDMS at different working distances. The lowest sheet resistance of the graphene films is 127Ω·sq-1. Furthermore, graphene lines at the range of 30μm-170μm were fabricated using the template assisted EHDA deposition method.

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Preparation of Silver-Plated Para-Aramid Fiber by Employing Low-Temperature Oxygen Plasma Treatment and Dopamine Functionalization

Coatings ◽

10.3390/coatings9100599 ◽

2019 ◽

Vol 9 (10) ◽

pp. 599 ◽

Cited By ~ 1

Author(s):

Zhenhua Sun ◽

Yanfen Zhou ◽

Wenyue Li ◽

Shaojuan Chen ◽

Shihua You ◽

...

Keyword(s):

Electrical Conductivity ◽

Silver Nanoparticles ◽

Plasma Treatment ◽

Electrical Resistance ◽

Oxygen Plasma ◽

Attenuated Total Reflection ◽

Oxygen Plasma Treatment ◽

Washing Fastness ◽

Before And After ◽

Electroless Silver Plating

Direct electroless silver plating of para-aramid (PPTA) is difficult due to its extremely low surface chemical energy. In order to facilitate the deposition of silver nanoparticles and to enhance the washing fastness, oxygen plasma treatment and dopamine modification were conducted before silver plating of PPTA fibers. Various techniques including scanning electron microscopy (SEM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray diffractometer (XRD) and thermogravimetric analyzer (TGA) were used to characterize the surface morphology, chemical composition and thermal stability of the silver-plated PPTA fibers. Electrical resistance and silver content of the silver-coated PPTA fibers before and after standard washing were also studied. The results showed that silver nanoparticles were successfully coated onto the surface of PPTA fibers with and without plasma treatment, but the coating continuity and the electrical conductivity of the silver-coated PPTA fibers were greatly enhanced with the assistance of plasma treatment. It was also demonstrated that the washing fastness of silver-coated PPTA fibers was improved after plasma treatment as indicated by electrical resistance and continuity of the silver nanoparticles after various washing cycles. It was found that the electrical resistance of plasma-treated PPTA-PDA/Ag fibers prepared at an AgNO3 concentration of 20 g/L reached 0.89 Ω/cm and increased slightly to 0.94 Ω/cm after 10 standard washing cycles. The silver-coated PPTA fibers also showed stable electrical conductivity under 250 repeated stretching-releasing cycles at a strain of 3%.

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Enhanced Thermopower of Graphene Films with Oxygen Plasma Treatment

ACS Nano ◽

10.1021/nn2001849 ◽

2011 ◽

Vol 5 (4) ◽

pp. 2749-2755 ◽

Cited By ~ 137

Author(s):

Ni Xiao ◽

Xiaochen Dong ◽

Li Song ◽

Dayong Liu ◽

YeeYan Tay ◽

...

Keyword(s):

Plasma Treatment ◽

Oxygen Plasma ◽

Oxygen Plasma Treatment ◽

Graphene Films

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High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.347-350.1535 ◽

2013 ◽

Vol 347-350 ◽

pp. 1535-1539

Author(s):

Jian Jun Zhou ◽

Liang Li ◽

Hai Yan Lu ◽

Ceng Kong ◽

Yue Chan Kong ◽

...

Keyword(s):

Plasma Treatment ◽

Breakdown Voltage ◽

Oxygen Plasma ◽

Cutoff Frequency ◽

Chemical Vapor ◽

Current Gain ◽

Organic Chemical ◽

Oxygen Plasma Treatment ◽

Gan Hemt ◽

High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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