Effects of Cu/Ba Ratio in Precursor on MOCVD-Deposited YBa2Cu3O7-x Films on YYC Buffered Ni-W Alloy Tape

2014 ◽  
Vol 1082 ◽  
pp. 95-99
Author(s):  
Fei Zhang ◽  
Jie Xiong ◽  
Rui Peng Zhao ◽  
Yan Xue ◽  
Bo Wan Tao
Keyword(s):  
Vapor Deposition ◽  
Ybco Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Alloy Tape

To study the effects of Cu/Ba ratio of precursor on YBa2Cu3O7-x (YBCO) film, we have employed the technique of metal-organic chemical vapor deposition to prepare 500 nm thick YBCO films on CeO2/YSZ/Y2O3 (YYC) buffered Ni-W alloy tapes at series of Cu/Ba ratios of precursor. The analysis obtained from X-ray diffraction and scanning electron microscope revealed that the YBCO films crystallized better and became more continuous and denser as Cu/Ba ratio increased from 0.81 to 1.00, yielding that the critical current density (Jc) of YBCO films at 77K and 0T rose from 1.0 MA/cm2 to 1.4 MA/cm2. Moreover, the energy dispersive spectroscopy indicated that the increase in Cu/Ba ratio of precursor made the Cu/Ba ratio of the YBCO film matrix closer to the theoretical value of 1.5. However, for the Cu/Ba ratio of precursor in the range of 1.00~1.21, the crystallization and texture deteriorated severely and many unexpected precipitates of Ba-Cu-O and Cu-O arose, resulting in the dramatic drop of Jc from 1.4 MA/cm2 to 0.1 MA/cm2.

The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
R. M. Biefeld ◽  
S. R. Kurtz
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Metal Organic ◽  
Interface Layers ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have prepared InAsSb/InGaAs strained-layer superlattices (SLS's) and InPSb confinement layers using metal-organic chemical vapor deposition (MOCVD) for use as infrared emitters. X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS's. Photoluminescence linewidth and intensity were used as a measure of the quality of the structures. Typical FWHM were less than 10 meV. The presence of interface layers were indicated by broadened x-ray diffraction peaks for samples grown under non-optimized conditions. Two types of interfacial layers apparently due to a difference in composition at the interfaces were observed with transmission electron microscopy (TEM). The width of the x-ray peaks can be explained by a variation of the interfacial layer thicknesses. Optimized growth resulted in SLS's with narrow x-ray peaks and high radiative efficiency. Room temperature LEDs operating between 4-5 μm have been prepared.

Deposition of Superconducting Tl-Ba-Ca-Cu-O Phases on Metal Foils by Metal-Organic Chemical Vapor Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
D. L. Schulzi ◽  
B. Hano ◽  
D. Neumayer ◽  
B. J. Hinds ◽  
T. J. Markst ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Foils ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTThe synthesis of superconducting Tl-Ba-Ca-Cu-O thin films on metal foils (Au and Ag) by metal-organic chemical vapor deposition (MOCVD) has been investigated. Ba-Ca-Cu-O-(F) films are first prepared via MOCVD using fluorinated “second generation” metal-organic precursors. After an intermediate anneal with water vapor-saturated oxygen to promote removal of F, Tl is introduced by annealing in the presence of a mixture of oxides (Tl2O3, BaO, CaO, CuO) of a specific composition. Characterization of the thin films by scanning electron microscopy, EDX, x-ray diffraction, and variable temperature magnetization measurements has been carried out. High temperature superconductor (HTS) films of Tl2Ba2Ca1Cu2O8−x on Au foil exhibit a magnetically derived Tc = 80K and a high degree of texturing with the crystallite c-axes oriented perpendicular to the substrate surface as evidenced by enhanced (000 x-ray diffraction reflections. Thin film coverage on Ag foil becomes non-contiguous during the (Tl2O3, BaO, CaO, CuO) mixture anneal.

scholarly journals Well-AlignedIrO2Nanocrystals

2007 ◽  
Vol 2007 ◽  
pp. 1-17 ◽  
Author(s):  
Alexandru Korotcov ◽  
Reui-San Chen ◽  
Hung-Pin Hsu ◽  
Ying-Sheng Huang ◽  
Dah-Shyang Tsai ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Substrate Effect ◽  
X Ray Diffraction ◽  
Scanning Electron Microscopy Micrographs ◽  
X Ray ◽  
Metal Organic ◽  
Vertically Aligned ◽  
Organic Chemical Vapor Deposition

We review the results of synthesis of well-alignedIrO2nanocrystals (NCs) on sapphire (SA), LiNbO3(LNO), LiTaO3(LTO) substrates via reactive magnetron sputtering and metal-organic chemical vapor deposition. The surface morphology and structural properties of the as-deposited NCs were characterized. Field emission scanning electron microscopy micrographs reveal that NCs grown on SA(100)/LNO(100) are vertically aligned, while the NCs on SA(012)/LTO(012) and SA(110) contain singly and doubly tilted alignments, respectively, with a tilt angle of∼35∘from the normal to the substrates. NCs grown on SA(001) show in-plane alignment with mosaic structure. The X-ray diffraction results indicate that the NCs are (001), (101), and (100) oriented on SA(100)/LNO(100), SA(012)/LTO(012)/SA(110), and SA(001) substrates, respectively. A strong substrate effect on the alignment of theIrO2NCs deposition has been demonstrated. The roles of different substrates in the formation of various textures of nanocrystallineIrO2are studied and the possible mechanisms have been discussed.

Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Wang ◽  
N.L. Edleman ◽  
J.R. Babcock ◽  
T.J. Marks ◽  
M.A. Lane ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Vapor Deposition ◽  
Carrier Density ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Sn Doping ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 'C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-InO series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2(4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V•s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

1997 ◽  
Vol 487 ◽  
Author(s):  
Daiji Noda ◽  
Torn Aoki ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Remote Plasma ◽  
X Ray ◽  
Composition Ratio ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractFor epitaxial growth of compound Zn1−xCd1−XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1−xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

In situ X-ray studies of metal organic chemical vapor deposition of PbZrxTi1−xO3

2007 ◽  
Vol 515 (14) ◽  
pp. 5593-5596 ◽  
Author(s):  
R.-V. Wang ◽  
F. Jiang ◽  
D.D. Fong ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

MOCVD of SnSx thin films for solar cell application

2015 ◽  
Vol 1738 ◽  
Author(s):  
Andrew J. Clayton ◽  
Stuart J. C. Irvine ◽  
Vincent Barrioz ◽  
Alessia Masciullo
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Sulfur Source ◽  
Tin Sulfide ◽  
X Ray Diffraction ◽  
Phase Growth ◽  
Solar Cell Application ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTAn inline metal organic chemical vapor deposition system was used to deposit tin sulfide at temperatures >500 °C. Tetramethyltin was used as the tin source and diethyldisulfide as the sulfur source. An overhead injector configuration was used delivering both precursors directly over the substrate. The tin and sulfur precursors were premixed before injection to improve chemical reaction in the gas phase. Growth temperatures 500 – 540 °C were employed producing films with approximate 1:1 stoichiometry of Sn and S detected by energy dispersive x-ray spectroscopy. X-ray diffraction showed there to be mixed phases with Sn2S3 present with SnS.

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