Optical and Electronic Properties of Mn-Doped ZnO Films Synthesized by RF Magnetron Sputtering

. Zn1-xMnxO films are prepared by radio frequency (RF) magnetron sputtering method. The wurtzite ZnO crystal can be well retained up to a Mn composition of 6.7% and doped Mn ions substituted into Zn sites of ZnO host lattice. All the samples show high transparency over the wavelengths from 450 to 800 nm. Optical transmittance study showed an increase in the bandgap (Eg) with increase in Mn atomic fraction x following Eg=3.26+1.43x eV. Furthermore, the midgap absorption around 420 nm (3 eV) in Mn doped ZnO films suggest that there are impurity levels created by doped Mn ions. The room temperature resistivities of the samples show an increase with the increase of Mn content, which indicates that the doped element is at the status of deep levels.

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Structural, Optical and Electronic Properties of Cu-Doped ZnO Films Synthesized by RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.97-101.1198 ◽

2010 ◽

Vol 97-101 ◽

pp. 1198-1202 ◽

Cited By ~ 2

Author(s):

Zhao Feng Wu ◽

Qin Yan Xu ◽

Xue Mei Wu ◽

Lan Jian Zhuge ◽

Bo Hong ◽

...

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Host Lattice ◽

Zno Films ◽

Band Gap Engineering ◽

The Status ◽

Deep Donor ◽

Impurity Bands ◽

Doped Zno ◽

Zno Crystal

Zn1-xCuxO films were prepared by radio frequency (RF) magnetron sputtering method. The wurtzite ZnO crystal can be well retained up to a Cu composition of 10% and doped Cu ions substituted into Zn sites of ZnO host lattice. All the samples show high transparency over the wavelengths from 400 to 1000 nm. The room temperature (RT) resistivity shows an increase in Mn doping samples, which indicates that the doped element is at the status of deep donor levels. The decrease in the bandgap in Cu doped ZnO films rather than in pure ZnO film indicates that there are impurity bands created by Cu 3d orbital or strong d-p coupling between Cu and O in our samples. In addition, photoluminescence (PL) spectra show UV emission at ~3.19 eV shifts to lower energy side with Cu doping, indicating the possibility of band-gap engineering in Zn1-xCuxO films.

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Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.560-561.820 ◽

2012 ◽

Vol 560-561 ◽

pp. 820-824

Author(s):

Yue Zhi Zhao ◽

Fei Xiong ◽

Guo Mian Gao ◽

Shi Jing Ding

Keyword(s):

Thin Films ◽

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

Flat Surfaces ◽

Atomic Force ◽

Mn Content ◽

Doped Zno ◽

Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

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