Ni-doped ZnO films deposited by RF magnetron sputtering using raw powder target

2018 ◽  
Vol 93 (4) ◽  
pp. 439-447 ◽  
Author(s):  
B. Khalfallah ◽  
F. Chaabouni ◽  
M. Abaab
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Powder Target ◽  
Doped Zno

Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar + H2 Ambience

2008 ◽  
Vol E91-C (10) ◽  
pp. 1649-1652 ◽  
Author(s):  
K. MUTO ◽  
S. ODASHIMA ◽  
N. NASU ◽  
O. MICHIKAMI
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap

2012 ◽  
Vol 12 (3) ◽  
pp. 2503-2508 ◽  
Author(s):  
Georgi P. Daniel ◽  
David Devraj Kumar ◽  
V. B. Justinvictor ◽  
Prabitha B. Nair ◽  
K. Joy ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Fabrication and properties of As-doped ZnO films grown on GaAs(0 0 1) substrates by radio frequency (rf) magnetron sputtering

2004 ◽  
Vol 221 (1-4) ◽  
pp. 32-37 ◽  
Author(s):  
Woong Lee ◽  
Deuk-Kyu Hwang ◽  
Min-Chang Jeong ◽  
Myeongkyu Lee ◽  
Min-Seok Oh ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Sign in / Sign up

Export Citation Format

Share Document