Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 362-367
Author(s):  
Feng Lu ◽  
Yu Sun ◽  
Cheng Hai Xu

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD,electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure,and Al2O3 crystal phase are not found. At the same time,the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

2011 ◽  
Vol 687 ◽  
pp. 585-590
Author(s):  
Feng Lu ◽  
Cheng Hai Xu ◽  
Li Shi Wen

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure,and Al2O3 crystal phase are not found. At the same time,the high quality ZAO films with the minimum resistivity of 4.5x×10-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.


2011 ◽  
Vol 299-300 ◽  
pp. 530-533
Author(s):  
Li Dan Tang ◽  
Bing Wang ◽  
Jian Zhong Wang

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm2/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×1017cm-3when annealing oxygen pressure is 1Pa.


JOM ◽  
2015 ◽  
Vol 67 (4) ◽  
pp. 834-839 ◽  
Author(s):  
A. Guru Sampath Kumar ◽  
L. Obulapathi ◽  
T. Sofi Sarmash ◽  
D. Jhansi Rani ◽  
M. Maddaiah ◽  
...  

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