Structural, Electrical and Optical Properties of Li-Doped ZnO Thin Films Influenced by Annealing Oxygen Pressure

2011 ◽  
Vol 299-300 ◽  
pp. 530-533
Author(s):  
Li Dan Tang ◽  
Bing Wang ◽  
Jian Zhong Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Surface Optical ◽  
Doped Zno

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm2/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×1017cm-3when annealing oxygen pressure is 1Pa.

Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 362-367
Author(s):  
Feng Lu ◽  
Yu Sun ◽  
Cheng Hai Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Zno Thin Films ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure ◽  
Doped Zno

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD，electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Influence of Annealing and Europium-Doping on the Structure and Optical Properties of ZnO Thin Films Grown on Quartz Substrate by Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 667-672 ◽  
Author(s):  
Q. Q. Dai ◽  
L. Luo ◽  
F. Y. Huang ◽  
D. P. Xiong ◽  
X.G. Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Transfer ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Films ◽  
Efficient Energy Transfer ◽  
Axis Orientation ◽  
Efficient Energy ◽  
Doped Zno

ZnO and Eu-doped ZnO thin films were deposited on quartz substrates by reactive radio-frequency magnetron sputtering from a ZnO and Eu-doped ZnO ceramic target respectively. The properties of thin films were characterized by atom force microscope (AFM), X-ray diffraction (XRD), and photoluminescence spectra (PL). XRD reveals that the prepared thin films possess a single crystalline hexagonal wurtzite crystal structure with preferential c-axis orientation. Under above-bandgap excitation at room temperature, PL shows that ZnO films exhibit strong UV near-band-edge excitonic emission and Eu-doped ZnO thin films present UV emission and red emission from Eu3+ ions, demonstrating efficient energy transfer from the host to Eu3+ ions. The influence of annealing on the structure and optical properties of ZnO and Eu-doped ZnO thin films is studied. The efficient energy transfer from the host to Eu3+ and high luminous efficiency indicates that the prepared Eu-doped ZnO thin films are very promising materials for lighting and flat panel display application.

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno

Influence of annealing on structural, electrical and optical properties of Dy-doped ZnO thin films

2007 ◽  
Vol 40 (22) ◽  
pp. 7041-7045 ◽  
Author(s):  
Huiming Huang ◽  
Xuefeng Ruan ◽  
Guojia Fang ◽  
Meiya Li ◽  
X Z Zhao
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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