Structure of AlN films deposited by magnetron sputtering method

AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure.

EFFECT OF MOLYBDENUM DOPING AND ANNEALING ON PHOTOLUMINESCENCE OF SPUTTERING-DERIVED ZINC OXIDE FILMS

The molybdenum-doped ZnO (MZO) films were deposited on quartz substrates by radio frequency magnetron sputtering. All films have a polycrystalline hexagonal wurtzite structure. Mo doping influences the grain size of the MZO films and leads to a compressive stress in the films. The valence of Mo in the MZO films is hexavalence. Mo doping enhances the emissions at 380 and 412 nm. Annealing significantly influences the photoluminescence (PL) spectra of the MZO films. The PL spectral intensity of the annealed films is much higher than that of the unannealed films. The emissions at 400 and 525 nm enhanced dramatically with the rising of annealing temperature while the emissions at 380 and 412 nm became weak or disappeared. Mo doping is beneficial for the enhancement of the emissions at 400 and 525 nm of the annealed MZO films. The origins of these emissions were discussed in detail.

Properties of Al Doped ZnO Thin films by DC Reaction Magnetron Sputtering

The high quality ZAO thin films were successfully produced by DC reaction magnetron sputtering technology. The XRD，electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x10-4Ω•㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x×10-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

Codoping Effects and Electrical Properties in Sol-Gel Li-Al Doped Zinc Oxide

Li and Al codoped ZnO (LAZO) thin films have been prepared by sol-gel method. The electrical and structural properties of the LAZO films have been investigated. X-ray diffraction (XRD) results showed that the prepared LAZO films had a polycrystalline hexagonal wurtzite structure. X-ray photoelectron spectrometer (XPS) measurements indicated that our sol-gel prepared films were of high purity and codoped with Li and Al evidenced by peaks centered at 74.1 and 55.6 eV. The resulting LAZO films were p-type, and had a low resistivity in the range of 10-3~100 Ωcm, and high carrier concentration in the range of 1014~1018 cm-3.