Impact of doping concentration and donor-layer thickness on the dc characterization of symmetric double-gate and single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension-A comparison

2010 ◽  
Author(s):  
M Bhattacharya ◽  
J Jogi ◽  
R S Gupta ◽  
M Gupta
Keyword(s):  
Layer Thickness ◽  
Doping Concentration ◽  
Double Gate ◽  
Inp Hemt ◽  
Dc Characterization

DC Characterization of Different Advanced MOSFET Architectures

2011 ◽  
Vol 324 ◽  
pp. 407-410 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Low Temperature ◽  
Parameter Extraction ◽  
Gate Length ◽  
Double Gate ◽  
Extraction Techniques ◽  
Interaction Mechanisms ◽  
Dc Characterization

A review of recent results concerning the DC characterization of FD- and Double Gate SOI MOSFET’s and FinFETs in modern CMOS technologies is given. By proper extraction techniques, distinction between the different interaction mechanisms is done. Parameter extraction conducted at room and low temperature clearly indicates that the mobility is directly impacted by shrinking the gate length in sub 100nm architectures.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

2017 ◽  
Vol 47 (2) ◽  
pp. 938-943 ◽  
Author(s):  
Yu Yang ◽  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Xiaojun Chan ◽  
Taejin Kim ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Doping Concentration

DC Characterization of AC Current Shunts for Wideband Power Applications

2011 ◽  
Vol 60 (7) ◽  
pp. 2191-2194 ◽  
Author(s):  
Gert Rietveld ◽  
J. H. N. van der Beek ◽  
Ernest Houtzager
Keyword(s):  
Ac Current ◽  
Dc Characterization

Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures

2000 ◽  
Vol 51-52 ◽  
pp. 441-448 ◽  
Author(s):  
K. Radhakrishnan ◽  
T.H.K. Patrick ◽  
H.Q. Zheng ◽  
P.H. Zhang ◽  
S.F. Yoon
Keyword(s):  
Doping Concentration ◽  
Inp Hemt ◽  
Effect Of Doping

Synthesis and Characterization of the PANI/ITO Conducting Nanocomposites

2010 ◽  
Vol 663-665 ◽  
pp. 542-545 ◽  
Author(s):  
Bing Jie Zhu ◽  
Xin Wei Wang ◽  
Mei Fang Zhu ◽  
Qing Hong Zhang ◽  
Yao Gang Li ◽  
...  
Keyword(s):  
Doping Concentration ◽  
In Situ Polymerization ◽  
Synthesis And Characterization ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Maximum Conductivity ◽  
Scanning Electron

The PANI/ITO conducting nanocomposites have been synthesized by in-situ polymerization. The obtained nanocomposites were characterized by X-ray diffraction pattern, scanning electron microscopy and Fourier transform infrared. Electrical conductivity measurements on the samples pressed into pellets showed that the maximum conductivity attained 2.0 ± 0.05 S/cm for PANI/ITO nanocomposites, at ITO doping concentration of 10 wt%. The results of the present work may provide a simple, rapid and efficient approach for preparing PANI/ITO nanocomposites.

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