Design of Readout Circuit for Pyroelectric Detector Based on Novel Pyroelectric Materials

2011 ◽  
Vol 361-363 ◽  
pp. 1918-1921
Author(s):  
Jiang Wang ◽  
Wei Ping Jing ◽  
Yan Jin Li
Keyword(s):  
Single Crystals ◽  
Focal Plane ◽  
Infrared Detectors ◽  
High Performance ◽  
Signal To Noise Ratio ◽  
Optical Power ◽  
Focal Plane Arrays ◽  
Readout Circuit ◽  
Weak Current ◽  
Broad Bandwidth

Recently, scientists discovered that relaxor-based ferroelectric single crystals, such as (1-x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3 (PMN-xPT, or PMNT) single crystals, exhibit extra-high pyroelectric responses. They are promising candidates for optical power detectors in broad bandwidth at ultraviolet, visible and infrared wavelength.To fabricate high performance infrared detectors with relaxor-based single crystals, the related readout circuit was investigated to increase signal-to-noise ratio, and 8×1 CMOS readout circuit is fabricated to gain very weak current, which provides a solution for uncooled large focal plane arrays devices based on relaxor-based single crystals.

Characterization of Microlens Structures Fabricated in Cd1-xZnxTe and Cdte/Si IRFPA Substrate Materials

2001 ◽  
Vol 7 (S2) ◽  
pp. 570-571
Author(s):  
P.R. Boyd ◽  
U. Lee ◽  
J. Little ◽  
D. Morton ◽  
A.J. Stoltz ◽  
...  
Keyword(s):  
Focal Plane ◽  
State Of The Art ◽  
Signal To Noise Ratio ◽  
Infrared Detector ◽  
Focal Plane Arrays ◽  
Readout Circuit ◽  
Antireflective Coatings ◽  
Large Area ◽  
Current State

The ternary II-VT alloy Hg1-xCdxTe has become the material of choice for many infrared detector applications. Current state of the art Hg1-xCdxTe infrared focal plane arrays (IRFPAs) are constructed as hybrid structures consisting of an epitaxial sensing layer of Hg1-xCdxTe on either a CdTe or Cd1-xZnxTe substrate, hybridized to a silicon readout circuit chip. For backside illuminated structures, like the typical infrared Hg1-xCdxTe detector array, multilayer antireflective coatings (AR) are required on the backside of the detector chip. The next generation of higher performance IRFPAs will be based on high densities of smaller detector pixels fabricated on large area monolithic heteroepitaxial substrate materials. Since the ultimate performance of photovoltaic diodes of this type is determined by the signal to noise ratio of the device, reducing the size of the pixels while lowering the undesirable noise currents in the devices also reduces the amount of signal generated by the diode.

Advanced III/V quantum-structure devices for high performance infrared focal plane arrays

2009 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Frank Rutz ◽  
Joachim Fleissner ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Quantum Structure ◽  
Infrared Focal Plane Arrays

Low-noise readout circuit for SWIR focal plane arrays

2017 ◽  
Author(s):  
Oguz Altun ◽  
Ferhat Tasdemir ◽  
Omer Lutfi Nuzumlali ◽  
Reha Kepenek ◽  
Ercihan Inceturkmen ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Readout Circuit

Test and evaluation of reference-based nonuniformity correction methods for microbolometer infrared detectors

2010 ◽  
Vol 18 (1) ◽  
Author(s):  
T. Orżanowski ◽  
H. Madura
Keyword(s):  
Amorphous Silicon ◽  
Focal Plane ◽  
Infrared Detectors ◽  
Focal Plane Array ◽  
Readout Circuit ◽  
Correction Algorithm ◽  
Nonuniformity Correction ◽  
Test And Evaluation

AbstractIn the paper, reference-based nonuniformity correction methods for microbolometer infrared detectors are discussed and tested. In order to evaluate their effectiveness, a complete readout circuit for amorphous silicon microbolometer focal plane array has been designed. The tests were carried out on a developed stand including several extended blackbodies. Some modification of standard two-point correction algorithm incorporating detectors response at external shutter to compensate offset drift is also proposed. The obtained results are presented.

The development of InGaAs short wavelength infrared focal plane arrays with high performance

2017 ◽  
Vol 80 ◽  
pp. 112-119 ◽  
Author(s):  
Xue Li ◽  
Haimei Gong ◽  
Jiaxiong Fang ◽  
Xiumei shao ◽  
Hengjing Tang ◽  
...  
Keyword(s):  
Focal Plane ◽  
Short Wavelength ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays

Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
General Characteristic ◽  
Focal Plane Arrays ◽  
Misfit Dislocations ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
Dislocation Interaction ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

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